首页 >IXTP90N055T>规格书列表
| 型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
IXTP90N055T | N-Channel Enhancement Mode Avalanche Rated 文件：220.7 Kbytes 页数：5 Pages | IXYS 艾赛斯 | IXYS | |
IXTP90N055T | isc N-Channel MOSFET Transistor 文件：295.44 Kbytes 页数：2 Pages | ISC 无锡固电 | ISC | |
isc N-Channel MOSFET Transistor 文件：295.44 Kbytes 页数：2 Pages | ISC 无锡固电 | ISC | ||
DC to DC Synchronous Converter Design 文件：200.65 Kbytes 页数：11 Pages | IXYS 艾赛斯 | IXYS | ||
IXTP90N055T | N-Channel: Trench-Gate Power MOSFETs with HiPerFET™ Options ·Trench Gate MOSFET Technology\n·Break down voltages VDSS: 36V to 300V\n·Current ratings ID25: 12A to 660A\n·Ultra-low on-state resistance RDS(on)\n·Superior avalanche ruggedness\n·Junction temperature TJ up to 175°C\n·International standard packages; | Littelfuse 力特 | Littelfuse | |
N通道沟槽栅 Gen2 MOSFET • 高电流性能（高达600A）\n• Incorporates Littelfuse HiPerFETTM technology for fast power switching 性能\n• 雪崩功能; | Littelfuse 力特 | Littelfuse |
详细参数
- 型号：
IXTP90N055T
- 功能描述：
MOSFET MOSFET Id90 BVdass55
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶体管极性：
N-Channel
- 汲极/源极击穿电压：
650 V
- 闸/源击穿电压：
25 V
- 漏极连续电流：
130 A 电阻汲极/源极
- RDS（导通）：
0.014 Ohms
- 配置：
Single
- 安装风格：
Through Hole
- 封装/箱体：
Max247
- 封装：
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IXYS |
23+ |
TO-220-3 |
11846 |
一级代理商现货批发,原装正品,假一罚十 |
询价 | ||
IXYS |
20+ |
TO-220 |
38900 |
原装优势主营型号-可开原型号增税票 |
询价 | ||
IXYS/艾赛斯 |
23+ |
TO-220 |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
IXYS/艾赛斯 |
25+ |
TO-220 |
10000 |
原装现货假一罚十 |
询价 | ||
IXYS |
22+ |
TO2203 |
9000 |
原厂渠道,现货配单 |
询价 | ||
IXYS原装 |
07+ |
TO-220 |
1950 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
询价 | ||
IXYS |
2022+ |
TO-220-3 |
38550 |
全新原装 支持表配单 中国著名电子元器件独立分销 |
询价 | ||
IXYS/艾赛斯 |
23+ |
TO-220 |
89630 |
当天发货全新原装现货 |
询价 | ||
IXYS |
23+ |
TO-220 |
8000 |
只做原装现货 |
询价 | ||
IXYS |
23+ |
TO-220 |
7000 |
询价 |
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