HiPerFAST IGBT

Optimized for 10-25 KHz hard switching and up to 150 KHz resonant switching Features Medium frequency IGBT Square RBSOA High current handling capability MOS Gate turn-on - drive simplicity

文件：583.54 Kbytes 页数：5 Pages

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艾赛斯

HiPerFAST IGBT

HiPerFAST™ IGBT Optimized for 10-25 KHz hard switching and up to 150 KHz resonant switching Features ● Medium frequency IGBT ● Square RBSOA ● High current handling capability ● MOS Gate turn-on - drive simplicity Applications ● PFC circuits ● Uninterruptible power supplies (UPS) ● Switch

文件：606.36 Kbytes 页数：6 Pages

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艾赛斯

HiPerFASTTM IGBT with Diode

Features • International standard package • Moderate frequency IGBT and antiparallel FRED in one package • High current handling capability • Newest generation HDMOSTM process • MOS Gate turn-on - drive simplicity Applications • AC motor speed control • DC servo and robot drives • DC

文件：114.38 Kbytes 页数：5 Pages

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艾赛斯

HiPerFAST IGBT with Diode

HiPerFASTTM IGBT with Diode Combi Pack Features • International standard packages JEDEC TO-247 SMD surface mountable and JEDEC TO-247 AD • High frequency IGBT and antiparallel FRED in one package • High current handling capability • Newest generation HDMOSTM process • MOS Ga

文件：141.09 Kbytes 页数：5 Pages

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PT IGBTs

·VCES: 300V to 1200V \n·IC(90): 2A to 200A \n·High Gain, Low conduction & switching losses. Classes:A2,A3,B2,B3,C2\n and C3 ·A2: DC to 10kHz. B2,B3: 15kHz to 40kHz C2: 40kHz to 100kHz \n C3: 50kHz -150kHz.·A3-Class Polar IGBT/Diode Types, Mid-Frequency Range (15KHz-40KHz)\n C3-300 V IGBT, ;

Littelfuse

力特

Package：TO-268-3，D³Pak（2 引线 + 接片），TO-268AA；包装：管件 类别：分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述：IGBT 600V 60A 200W TO268

IXYS

艾赛斯

PT IGBTs

·VCES: 300V to 1200V \n·IC(90): 2A to 200A \n·High Gain, Low conduction & switching losses. Classes:A2,A3,B2,B3,C2\n and C3 ·A2: DC to 10kHz. B2,B3: 15kHz to 40kHz C2: 40kHz to 100kHz \n C3: 50kHz -150kHz.·A3-Class Polar IGBT/Diode Types, Mid-Frequency Range (15KHz-40KHz)\n C3-300 V IGBT, ;

Littelfuse

力特

Package：TO-268-3，D³Pak（2 引线 + 接片），TO-268AA；包装：管件 类别：分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述：IGBT 600V 70A 190W TO268

IXYS

艾赛斯

Package：TO-268-3，D³Pak（2 引线 + 接片），TO-268AA；包装：管件 类别：分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述：IGBT 600V 70A 190W TO268

IXYS

艾赛斯