IXGT30N60B2D1

HiPerFAST IGBT

HiPerFAST™IGBT Optimizedfor10-25KHzhardswitchingandupto150KHzresonantswitching Features ●MediumfrequencyIGBT ●SquareRBSOA ●Highcurrenthandlingcapability ●MOSGateturn-on-drivesimplicity Applications ●PFCcircuits ●Uninterruptiblepowersupplies(UPS) ●Switch

IXGT30N60B2D1

PT IGBTs; ·VCES: 300V to 1200V \n·IC(90): 2A to 200A \n·High Gain, Low conduction & switching losses. Classes:A2,A3,B2,B3,C2\n and C3 ·A2: DC to 10kHz. B2,B3: 15kHz to 40kHz C2: 40kHz to 100kHz \n C3: 50kHz -150kHz.·A3-Class Polar IGBT/Diode Types, Mid-Frequency Range (15KHz-40KHz)\n C3-300 V IGBT, High Speed PT for 50kHz-150kHz switching·Available with or without ultrafast diode in parallel\n;

IXGT30N60B2D1

Package：TO-268-3，D³Pak（2 引线 + 接片），TO-268AA；包装：管件 类别：分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述：IGBT 600V 70A 190W TO268

IXGH30N60B2D1

HiPerFASTIGBT

HiPerFAST™IGBT Optimizedfor10-25KHzhardswitchingandupto150KHzresonantswitching Features ●MediumfrequencyIGBT ●SquareRBSOA ●Highcurrenthandlingcapability ●MOSGateturn-on-drivesimplicity Applications ●PFCcircuits ●Uninterruptiblepowersupplies(UPS) ●Switch

IXSH30N60B2D1

HighSpeedIGBTwithDiode

HighSpeedIGBTwithDiode ShortCircuitSOACapability Features •Internationalstandardpackage •GuaranteedShortCircuitSOA capability •LowVCE(sat) -forlowon-stateconductionlosses •Highcurrenthandlingcapability •MOSGateturn-on -drivesimplicity •Fastfallt