isc N-Channel MOSFET Transistor

FEATURES Drain Current -ID=60A@ TC=25℃ Drain Source Voltage -VDSS= 250V(Min) Static Drain-Source On-Resistance -RDS(on) = 23mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：311.89 Kbytes 页数：2 Pages

ISC

无锡固电

N-Channel Enhancement Mode Avalanche Rated Avalanche Rated

文件：272.07 Kbytes 页数：6 Pages

IXYS

艾赛斯

N通道 超-超级结MOSFET

• 最低的导通电阻RDS(ON) 和栅极电荷Qg\n• 快速软恢复体二极管\n• dv/dt强度\n• 一流的雪崩功能\n• 国际标准包装;

Littelfuse

力特

HiPerFET Power MOSFETs Q-Class

N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Low Gate Charge and Capacitances Features • Low gate charge • International standard packages • EpoxymeetUL94V-0, flammability classification • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Avalanche

文件：71.64 Kbytes 页数：2 Pages

IXYS

艾赛斯

N-Channel Enhancement Mode

文件：170.52 Kbytes 页数：4 Pages

IXYS

艾赛斯

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 60A@ TC=25℃ ·Drain Source Voltage -VDSS= 250V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 46mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and High Power density

文件：321.9 Kbytes 页数：2 Pages

ISC

无锡固电