| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
IXTH60N25 | isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent-ID=60A@TC=25℃ ·DrainSourceVoltage-VDSS=250V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=46mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andHighPowerdensity | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | |
IXTH60N25 | N-Channel Enhancement Mode | IXYS IXYS Integrated Circuits Division | IXYS | |
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=60A@TC=25℃ ·DrainSourceVoltage- :VDSS=250V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=47mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
HiPerFETPowerMOSFETsQ-Class N-ChannelEnhancementMode AvalancheRated,Highdv/dt,Lowtrr LowGateChargeandCapacitances Features •Lowgatecharge •Internationalstandardpackages •EpoxymeetUL94V-0,flammabilityclassification •LowRDS(on)HDMOSTMprocess •Ruggedpolysilicongatecellstructure •Avalanche | IXYS IXYS Integrated Circuits Division | IXYS | ||
HiPerFETPowerMOSFETsQ-Class N-ChannelEnhancementMode AvalancheRated,Highdv/dt,Lowtrr LowGateChargeandCapacitances Features •Lowgatecharge •Internationalstandardpackages •EpoxymeetUL94V-0,flammabilityclassification •LowRDS(on)HDMOSTMprocess •Ruggedpolysilicongatecellstructure •Avalanche | IXYS IXYS Integrated Circuits Division | IXYS | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=60A@TC=25℃ ·DrainSourceVoltage- :VDSS=250V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=47mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=60A@TC=25℃ ·DrainSourceVoltage-VDSS=250V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=23mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andPFCCircuits.. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
iscN-ChannelMOSFETTransistor FEATURES DrainCurrent-ID=60A@TC=25℃ DrainSourceVoltage-VDSS=250V(Min) StaticDrain-SourceOn-Resistance -RDS(on)=23mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
HiPerFETPowerMOSFETsQ-Class N-ChannelEnhancementMode AvalancheRated,Highdv/dt,Lowtrr LowGateChargeandCapacitances Features •Lowgatecharge •Internationalstandardpackages •EpoxymeetUL94V-0,flammabilityclassification •LowRDS(on)HDMOSTMprocess •Ruggedpolysilicongatecellstructure •Avalanche | IXYS IXYS Integrated Circuits Division | IXYS | ||
N-ChannelEnhancementMode | IXYS IXYS Integrated Circuits Division | IXYS |
详细参数
- 型号：
IXTH60N25
- 功能描述：
MOSFET 60 Amps 250V 0.046 Rds
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶体管极性：
N-Channel
- 汲极/源极击穿电压：
650 V
- 闸/源击穿电压：
25 V
- 漏极连续电流：
130 A 电阻汲极/源极
- RDS（导通）：
0.014 Ohms
- 配置：
Single
- 安装风格：
Through Hole
- 封装/箱体：
Max247
- 封装：
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IXYS |
24+ |
TO-247(IXTH) |
30000 |
晶体管-分立半导体产品-原装正品 |
询价 | ||
IXYS/艾赛斯 |
17+ |
TO-247 |
31518 |
原装正品 可含税交易 |
询价 | ||
23+ |
N/A |
49100 |
正品授权货源可靠 |
询价 | |||
IXYS |
1931+ |
N/A |
18 |
加我qq或微信，了解更多详细信息,体验一站式购物 |
询价 | ||
IXYS |
1809+ |
TO-247 |
326 |
就找我吧!--邀您体验愉快问购元件! |
询价 | ||
IXYS/艾赛斯 |
23+ |
TO-247 |
5425 |
公司只做原装正品 |
询价 | ||
IXYS/艾赛斯 |
23+ |
TO-247 |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
IXYS |
22+ |
NA |
18 |
加我QQ或微信咨询更多详细信息, |
询价 | ||
IXYS/艾赛斯 |
2022 |
TO-247 |
80000 |
原装现货,OEM渠道,欢迎咨询 |
询价 | ||
IXYS |
21+ |
TO2473 |
13880 |
公司只售原装,支持实单 |
询价 |
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