ISB3001

isc Silicon NPN Power Transistor

DESCRIPTION ·Collector-EmitterBreakdownVoltage -V(BR)CEO=400V(Min) ·Collector-EmitterSaturationVoltage -VCE(sat)=1.0V(Max)@IC=4A APPLICATIONS ·Designedforpoweramplifier,highspeedswitchingand regulatedpowersupplyapplications.

JH3001

SubminiaturePowerRelays

FEATURES 15Aswitchingcapabilities SPST-NOandSPDTconfigurations Subminiature,standardPCBlayout,lowcost SealedandUnsealedtypesavailable

K3001

Soft,round,6mmdia,Hard,flat,12mmwide,Hard,flat,25mmwide

[VERMASON] Description: ThebrushesconsistofaconductiveplastichandleandThunderonconductivefibres,mixed withanimalhairifstiffnessisdesired.Resistancefromthetipofthebrushtothehandleisless than5x106ohm.Brushesshouldbeusedbyoperatorswhoareearthed

KBP3001

3A100VRectifyingbridge

KDT3001A

PhotoTransistor

Description TheKDT3001Aisahigh-sensitivityNPNsiliconphototransistormountedinΦ3mm(T-1)allplasticmoldtype. Features ◾Φ3mm(T-1)allplasticmoldtype ◾Colorlesstransparencylens ◾Singlephototransistoroutput Applications ◾Opticaldetectors/switch ◾VCR,Camcoders ◾Flopp

KEL3001A

InfraredEmittingDiode

Description TheKEL3001AisGaAlAsinfraredemittingdiodethatisdesignedforhighpower,lowforwardvoltageandhighspeed.Thisdeviceisoptimizedforspeedandefficiencyatemissionwavelength940nmandhasahighradientefficiencyoverawiderangeofforwardcurrent.Thisdeviceispac

KEL-3001A

InfraredEmittingDiodes(GaAs)

KIT3001A

PhotoInterrupter

KIT3001B

PhotoInterrupter

LGER3001

SAWResonator315.000MHz