丝印：IRLR3410；Package：TO-252；N-Channel MOSFET

文件：261.839 Kbytes 页数：7 Pages

KEXIN

科信电子

HEXFET짰 Power MOSFET

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, p

文件：291.6 Kbytes 页数：11 Pages

IRF

AUTOMOTIVE MOSFET

Description This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features com

文件：308.56 Kbytes 页数：11 Pages

IRF

Logic-Level Gate Drive

Description This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features com

文件：327.71 Kbytes 页数：11 Pages

IRF

Logic-Level Gate Drive

Description This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features com

文件：327.71 Kbytes 页数：11 Pages

IRF

N-Channel Super Trench Power MOSFET

Features VDS= 100V, ID= 78 A RDS(ON)

文件：841.44 Kbytes 页数：4 Pages

Bychip

百域芯

丝印：LR3110Z；Package：TO-252；N-Channel MOSFET

Application | « Reverse Battery protection Load switch « Power management « PWM Application

文件：3.22398 Mbytes 页数：5 Pages

TECHPUBLIC

台舟电子

Power MOSFET

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for,

文件：139.15 Kbytes 页数：10 Pages

IRF

HEXFET Power MOSFET

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well

文件：307.21 Kbytes 页数：10 Pages

IRF

MOSFET

Description The D-PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications. Features VDS (V) = 100V ID = 17A (VGS = 10V) RDS(ON) =105mW (VGS = 10V)

文件：388.28 Kbytes 页数：7 Pages

EVVOSEMI

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