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IRLR3303PBF中文资料PDF规格书
IRLR3303PBF规格书详情
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications.
Logic-Level Gate Drive
Ultra Low On-Resistance
Surface Mount (IRLR3303)
Straight Lead (IRLU3303)
Advanced Process Technology
Fast Switching
Fully Avalanche Rated
Lead-Free
产品属性
- 型号：
IRLR3303PBF
- 功能描述：
MOSFET 30V 1 N-CH HEXFET 31mOhms 17.3nC
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶体管极性：
N-Channel
- 汲极/源极击穿电压：
650 V
- 闸/源击穿电压：
25 V
- 漏极连续电流：
130 A 电阻汲极/源极
- RDS（导通）：
0.014 Ohms
- 配置：
Single
- 安装风格：
Through Hole
- 封装/箱体：
Max247
- 封装：
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
20+ |
DPAK |
36900 |
原装优势主营型号-可开原型号增税票 |
询价 | ||
Infineon Technologies |
21+ |
TO2523 DPak (2 Leads + Tab) SC |
13880 |
公司只售原装,支持实单 |
询价 | ||
IR |
24+ |
TO-252 |
990000 |
明嘉莱只做原装正品现货 |
询价 | ||
IR |
2022 |
TO-252 |
80000 |
原装现货,OEM渠道,欢迎咨询 |
询价 | ||
IR |
23+ |
D-PAK |
12300 |
全新原装真实库存含13点增值税票! |
询价 | ||
IR |
10+ |
TO-252 |
148 |
询价 | |||
IR |
22+/23+ |
TO-252 |
9800 |
原装进口公司现货假一赔百 |
询价 | ||
IR |
21+ |
65230 |
询价 | ||||
IR |
21+ |
D-pak |
9852 |
只做原装正品现货!或订货假一赔十! |
询价 | ||
IR |
23+ |
TO-252 |
30000 |
全新原装现货,价格优势 |
询价 |
