IRLR3303PBF资料使用说明书库存现货IRF-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
IRLR3303PBF	文件：307.21 Kbytes Page：10 Pages	HEXFET Power MOSFET Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well 文件：307.21 Kbytes 页数：10 Pages	IRF	IRF
IRLRSLASHU3303	文件：139.15 Kbytes Page：10 Pages	Power MOSFET Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, 文件：139.15 Kbytes 页数：10 Pages	IRF	IRF
IRLU3303	文件：139.15 Kbytes Page：10 Pages	Power MOSFET Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, 文件：139.15 Kbytes 页数：10 Pages	IRF	IRF
IRLU3303	文件：247.04 Kbytes Page：2 Pages	isc N-Channel MOSFET Transistor 文件：247.04 Kbytes 页数：2 Pages	ISC 无锡固电	ISC

更多IRLR3303PBF供应商更新时间2026-2-2 17:21:00