Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The st

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VishayVishay Siliconix

威世威世科技公司

Surface Mount (IRLR120N)

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, p

文件：299.66 Kbytes 页数：11 Pages

IRF

Advanced Power MOSFET

文件：225.82 Kbytes 页数：7 Pages

Fairchild

仙童半导体

Power MOSFET(Vdss=100V, Rds(on)=0.185ohm, Id=10A)

文件：173.96 Kbytes 页数：10 Pages

IRF