AUTOMOTIVE MOSFET

文件：169.12 Kbytes 页数：8 Pages

IRF

N-Channel MOSFET Transistor

文件：334.62 Kbytes 页数：2 Pages

ISC

无锡固电

采用 D-Pak 封装的 55V 单 N 通道功率 MOSFET

\n优势:\n• 符合 RoHS\n• 具有业内先进的品质\n• 动态的dv/dt额定值\n• 快速开关\n• 完全雪崩额定值\n• 175°C 的工作温度\n• 逻辑电平;

Infineon

英飞凌

Logic-Level Gate Drive

Description This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features com

文件：327.71 Kbytes 页数：11 Pages

IRF

AUTOMOTIVE MOSFET

Description This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features com

文件：308.56 Kbytes 页数：11 Pages

IRF

Logic-Level Gate Drive

Description This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features com

文件：327.71 Kbytes 页数：11 Pages

IRF

Advanced Process Technology

文件：327.71 Kbytes 页数：11 Pages

IRF

Advanced Process Technology

文件：327.71 Kbytes 页数：11 Pages

IRF

N-Channel 6 0-V (D-S) MOSFET

文件：988.46 Kbytes 页数：6 Pages

VBSEMI

微碧半导体