HEXFET짰 Power MOSFET

Description Fifth Generation HEXFETs utilize advanced processing techniques to achieve extremely low onresistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an ex

文件：449.99 Kbytes 页数：9 Pages

INFINEON

英飞凌

HEXFET Power MOSFET

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

文件：188.49 Kbytes 页数：10 Pages

IRF

HEXFET Power MOSFET

文件：294.11 Kbytes 页数：10 Pages

IRF

AUTOMOTIVE MOSFET

VDSS = 55V RDS(on) = 8.0mΩ ID = 75A Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction oper

文件：296.88 Kbytes 页数：12 Pages

IRF

AUTOMOTIVE MOSFET

VDSS = 55V RDS(on) = 8.0mΩ ID = 75A Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction oper

文件：296.88 Kbytes 页数：12 Pages

IRF

HEXFET짰 Power MOSFET

VDSS = 55V RDS(on) = 8.0mΩ ID = 75A Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction oper

文件：289.46 Kbytes 页数：13 Pages

IRF

HEXFET짰 Power MOSFET

VDSS = 55V RDS(on) = 8.0mΩ ID = 75A Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction oper

文件：289.46 Kbytes 页数：13 Pages

IRF

AUTOMOTIVE MOSFET

VDSS = 55V RDS(on) = 8.0mΩ ID = 75A Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction oper

文件：296.88 Kbytes 页数：12 Pages

IRF

HEXFET짰 Power MOSFET

VDSS = 55V RDS(on) = 8.0mΩ ID = 75A Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction oper

文件：289.46 Kbytes 页数：13 Pages

IRF

SMPS MOSFET

Applications High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use High Frequency Buck Converters for Computer Processor Power 100 RG Tested Benefits Ultra-Low Gate Impedance Very Low RDS(on)a t 4.5V VGS Fully Characterized Av

文件：236.56 Kbytes 页数：11 Pages

IRF