IRL3705ZS中文资料IRF数据手册PDF规格书
IRL3705ZS规格书详情
VDSS = 55V
RDS(on) = 8.0mΩ
ID = 75A
Description
Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device
for use in Automotive applications and a wide variety of other applications.
Features
● Logic Level
● Advanced Process Technology
● Ultra Low On-Resistance
● 175°C Operating Temperature
● Fast Switching
● Repetitive Avalanche Allowed up to Tjmax
产品属性
- 型号:
IRL3705ZS
- 功能描述:
MOSFET N-CH 55V 75A D2PAK
- RoHS:
否
- 类别:
分离式半导体产品 >> FET - 单
- 系列:
HEXFET®
- 标准包装:
1,000
- 系列:
MESH OVERLAY™ FET
- 型:
MOSFET N 通道,金属氧化物 FET
- 特点:
逻辑电平门
- 漏极至源极电压(Vdss):
200V 电流 - 连续漏极(Id) @ 25°
- C:
18A 开态Rds(最大)@ Id, Vgs @ 25°
- C:
180 毫欧 @ 9A,10V Id 时的
- Vgs(th)(最大):
4V @ 250µA 闸电荷(Qg) @
- Vgs:
72nC @ 10V 输入电容(Ciss) @
- Vds:
1560pF @ 25V 功率 -
- 最大:
40W
- 安装类型:
通孔
- 封装/外壳:
TO-220-3 整包
- 供应商设备封装:
TO-220FP
- 包装:
管件
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
IR |
23+ |
NA/ |
9249 |
原装现货,当天可交货,原型号开票 |
询价 | ||
IR |
2020+ |
D2-PAK |
16800 |
绝对原装进口现货,假一赔十,价格优势!? |
询价 | ||
IR |
23+ |
TO-263 |
20000 |
原厂原装正品现货 |
询价 | ||
IR |
23+ |
D2-Pak |
8600 |
全新原装现货 |
询价 | ||
INFINEON |
ROHS/new original |
原封 □ |
21500 |
INFINEON优势 /原装现货长期供应现货支持 |
询价 | ||
IR |
21+ |
TO263 |
1709 |
询价 | |||
IR |
2016+ |
TO-263 |
6528 |
房间原装进口现货假一赔十 |
询价 | ||
IR |
22+ |
D2-PAK |
9450 |
原装正品,实单请联系 |
询价 | ||
IR |
23+ |
TO-220 |
5000 |
专做原装正品,假一罚百! |
询价 | ||
IR |
23+ |
TO-263 |
8499 |
原厂原装正品 |
询价 |