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IRL2203NSTRLPBF

Advanced Process Technology

Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for,

文件:295.79 Kbytes 页数:10 Pages

IRF

IRL2203S

Power MOSFET(Vdss=30V, Rds(on)=0.007ohm, Id=100A??

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provi

文件:173.01 Kbytes 页数:9 Pages

IRF

IRL2505

Power MOSFET

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provi

文件:178.32 Kbytes 页数:10 Pages

IRF

IRL2505L

Power MOSFET

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provi

文件:178.32 Kbytes 页数:10 Pages

IRF

IRL2505LPBF

HEXFET Power MOSFET

Coming Soon. If you have some information on related parts, please share useful information by adding links below.

文件:288.6 Kbytes 页数:10 Pages

IRF

IRL2505S

Power MOSFET

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provi

文件:178.32 Kbytes 页数:10 Pages

IRF

IRL2505S/L

Power MOSFET

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provi

文件:178.32 Kbytes 页数:10 Pages

IRF

IRL2505SPBF

HEXFET Power MOSFET

Coming Soon. If you have some information on related parts, please share useful information by adding links below.

文件:288.6 Kbytes 页数:10 Pages

IRF

IRL2505SSLASHL

Power MOSFET

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provi

文件:178.32 Kbytes 页数:10 Pages

IRF

IRL2505STRLPBF

HEXFET Power MOSFET

Coming Soon. If you have some information on related parts, please share useful information by adding links below.

文件:288.6 Kbytes 页数:10 Pages

IRF

技术参数

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    IRL

供应商型号品牌批号封装库存备注价格
TRANSISTORMO
25+
SMD2
2100
⊙⊙新加坡大量现货库存,深圳常备现货!欢迎查询!⊙
询价
ir
23+
9000
原装真实现货库存,专业定货,特价
询价
IOR
24+
SMD
2500
询价
IR
23+
TO-220
2870
绝对全新原装!优势供货渠道!特价!请放心订购!
询价
IR
24+
SOT23-3
5825
公司原厂原装现货假一罚十!特价出售!强势库存!
询价
ir
24+
N/A
6980
原装现货,可开13%税票
询价
IR
23+
TO220
5000
原装正品,假一罚十
询价
IR
17+
SOT-23
6200
100%原装正品现货
询价
IR
24+
SOT-23
9544
原装现货假一罚十
询价
IR
2016+
SOT-163
178000
只做原装,假一罚十,公司可开17%增值税发票!
询价
更多IRL供应商 更新时间2026-3-18 11:02:00