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型号	下载订购	功能描述	制造商上传企业	LOGO
IRL1404L	文件：134.4 Kbytes Page：10 Pages	HEXFET-R Power MOSFET Description Seventh Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well kn 文件：134.4 Kbytes 页数：10 Pages	IRF	IRF
IRL1404LPBF	文件：653.33 Kbytes Page：11 Pages	HEXFET짰 Power MOSFET Description Seventh Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well kn 文件：653.33 Kbytes 页数：11 Pages	IRF	IRF
IRL1404S	文件：134.4 Kbytes Page：10 Pages	HEXFET-R Power MOSFET Description Seventh Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well kn 文件：134.4 Kbytes 页数：10 Pages	IRF	IRF
IRL1404SPBF	文件：653.33 Kbytes Page：11 Pages	HEXFET짰 Power MOSFET Description Seventh Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well kn 文件：653.33 Kbytes 页数：11 Pages	IRF	IRF
IRL1404SPFF	文件：653.33 Kbytes Page：11 Pages	HEXFET짰 Power MOSFET Description Seventh Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well kn 文件：653.33 Kbytes 页数：11 Pages	IRF	IRF
IRL1404Z	文件：648.46 Kbytes Page：12 Pages	AUTOMOTIVE MOSFET 文件：648.46 Kbytes 页数：12 Pages	IRF	IRF
IRL1404ZL	文件：648.46 Kbytes Page：12 Pages	AUTOMOTIVE MOSFET 文件：648.46 Kbytes 页数：12 Pages	IRF	IRF
IRL1404ZLPBF	文件：793.38 Kbytes Page：13 Pages	AUTOMOTIVE MOSFET HEXFET짰 Power MOSFET Description This HEXFET®Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features comb 文件：793.38 Kbytes 页数：13 Pages	IRF	IRF
IRL1404ZPBF	文件：793.38 Kbytes Page：13 Pages	AUTOMOTIVE MOSFET HEXFET짰 Power MOSFET Description This HEXFET®Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features comb 文件：793.38 Kbytes 页数：13 Pages	IRF	IRF
IRL1404ZS	文件：648.46 Kbytes Page：12 Pages	AUTOMOTIVE MOSFET 文件：648.46 Kbytes 页数：12 Pages	IRF	IRF

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供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市福安瓯科技有限公司	IRLR8503TR(30V.34A)	TRANSISTORMO	25+	SMD2	2100	⊙⊙新加坡大量现货库存,深圳常备现货!欢迎查询!⊙	询价
深圳市荣泽信电子科技有限公司	IRLL014N	ir	23+		9000	原装真实现货库存,专业定货,特价	询价
深圳市一线半导体有限公司	IRLMS5703TR	IOR	24+	SMD	2500	新	询价
深圳市毅创腾电子科技有限公司	IRLZ44N	IR	23+	TO-220	2870	绝对全新原装!优势供货渠道!特价!请放心订购!	询价
深圳市豪迈兴电子有限公司	IRLML6302TRPBF	IR	24+	SOT23-3	5825	公司原厂原装现货假一罚十!特价出售!强势库存!	询价
深圳市欧立现代科技有限公司	IRLU3303	ir	24+	N/A	6980	原装现货,可开13%税票	询价
齐创科技(上海,北京,青岛)有限公司	IRL3103	IR	23+	TO220	5000	原装正品,假一罚十	询价
深圳市恒创达实业有限公司	IRLML2803TRPBF	IR	17+	SOT-23	6200	100%原装正品现货	询价
深圳市弘为电子有限公司	IRLML6402TR	IR	24+	SOT-23	9544	原装现货假一罚十	询价
深圳市凌旭科技有限公司	IRLMS1503TRPBF	IR	2016+	SOT-163	178000	只做原装,假一罚十,公司可开17%增值税发票!	询价

更多IRL供应商更新时间2026-3-17 11:02:00

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