AUTOMOTIVE MOSFET HEXFET짰 Power MOSFET

Description This HEXFET®Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features comb

文件：793.38 Kbytes 页数：13 Pages

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Power MOSFET(Vdss=30V, Rds(on)=7.0mohm, Id=116A??

Description Advanced HEXFET®Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for,

文件：221.17 Kbytes 页数：8 Pages

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Power MOSFET(Vdss=30V, Rds(on)=7.0mohm, Id=116A??

Description Advanced HEXFET®Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for,

文件：221.17 Kbytes 页数：8 Pages

IRF

Power MOSFET(Vdss=30V, Rds(on)=7.0mohm, Id=116A??

Description Advanced HEXFET®Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for,

文件：132.36 Kbytes 页数：10 Pages

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HEXFET짰 Power MOSFET

Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for,

文件：231.35 Kbytes 页数：11 Pages

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Advanced Process Technology

Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for,

文件：295.79 Kbytes 页数：10 Pages

IRF

HEXFET짰 Power MOSFET

Description Advanced HEXFET®Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for,

文件：183.07 Kbytes 页数：8 Pages

IRF

Power MOSFET(Vdss=30V, Rds(on)=7.0mohm, Id=116A??

Description Advanced HEXFET®Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for,

文件：132.36 Kbytes 页数：10 Pages

IRF

HEXFET짰 Power MOSFET

Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for,

文件：231.35 Kbytes 页数：11 Pages

IRF

Advanced Process Technology

Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for,

文件：295.79 Kbytes 页数：10 Pages

IRF