| 型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
IRG4PH30 | INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, Vce(on)typ.=3.10V, @Vge=15V, Ic=10A) Features • High short circuit rating optimized for motor control, tsc =10µs, VCC = 720V , TJ = 125°C, VGE = 15V • Combines low conduction losses with high switching speed • Latest generation design provides tighter parameter distribution and higher efficiency than previous g 文件：161.67 Kbytes 页数：8 Pages | IRF | IRF | |
IRG4PH30 | INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=1200V, Vce(on)typ.=3.10V, @Vge=15V, Ic=10A) Features • High short circuit rating optimized for motor control, tsc =10µs, VCC = 720V , TJ = 125°C, VGE = 15V • Combines low conduction losses with high switching speed • Tighter parameter distribution and higher efficiency than previous generations • IGBT co-packaged with HE 文件：212.54 Kbytes 页数：10 Pages | IRF | IRF | |
IRG4PH30 | INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=1200V, Vce(on)typ.=3.10V, @Vge=15V, Ic=10A) | Infineon 英飞凌 | Infineon | |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, Vce(on)typ.=3.10V, @Vge=15V, Ic=10A) Features • High short circuit rating optimized for motor control, tsc =10µs, VCC = 720V , TJ = 125°C, VGE = 15V • Combines low conduction losses with high switching speed • Latest generation design provides tighter parameter distribution and higher efficiency than previous g 文件：161.67 Kbytes 页数：8 Pages | IRF | IRF | ||
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=1200V, Vce(on)typ.=3.10V, @Vge=15V, Ic=10A) Features • High short circuit rating optimized for motor control, tsc =10µs, VCC = 720V , TJ = 125°C, VGE = 15V • Combines low conduction losses with high switching speed • Tighter parameter distribution and higher efficiency than previous generations • IGBT co-packaged with HE 文件：212.54 Kbytes 页数：10 Pages | IRF | IRF | ||
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • High short circuit rating optimized for motor control, tsc =10µs, VCC = 720V , TJ = 125°C, VGE = 15V • Combines low conduction losses with high switching speed • Tighter parameter distribution and higher efficiency than previous generations • IGBT co-packaged with HE 文件：468.82 Kbytes 页数：10 Pages | IRF | IRF | ||
INSULATED GATE BIPOLAR TRANSISTOR Short Circuit Rated Ultrafast IGBT Features • High short circuit rating optimized for motor control, tsc =10µs, VCC = 720V , TJ = 125°C, VGE = 15V • Combines low conduction losses with high switching speed • Latest generation design provides tighter parameter distribution and higher efficiency than previous g 文件：345.91 Kbytes 页数：8 Pages | IRF | IRF | ||
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE 文件：477.95 Kbytes 页数：11 Pages | IRF | IRF | ||
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE 文件：477.95 Kbytes 页数：11 Pages | IRF | IRF | ||
INSULATED GATE BIPOLAR TRANSISTOR 文件：354.86 Kbytes 页数：9 Pages | IRF | IRF |
技术参数
- Technology ：
IGBT Gen 4
- Switching Frequency min max：
8.0kHz 30.0kHz
- Package ：
TO-247
- Voltage Class max：
1200.0V
- IC(@100°) max：
10.0A
- IC(@25°) max：
20.0A
- ICpuls max：
40.0A
- Ptot max：
100.0W
- VCE(sat) ：
3.1V
- Eon ：
0.64mJ
- Eoff(Hard Switching) ：
0.92mJ
- td(on) ：
27.0ns
- tr ：
26.0ns
- td(off) ：
310.0ns
- tf ：
330.0ns
- QGate ：
94.0nC
- Ets (max)：
1.56mJ (2.4mJ)
- Switching Frequency ：
Gen 4 8-30 kHz
- VCE max：
1200.0V
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
22+ |
TO |
6000 |
终端可免费供样,支持BOM配单 |
询价 | ||
IR |
23+ |
TO |
8000 |
只做原装现货 |
询价 | ||
IR |
23+ |
TO |
7000 |
询价 | |||
IR |
24+ |
TO-247AC |
8866 |
询价 | |||
DISCRETE |
25 |
IR |
3500 |
询价 | |||
IR |
2015+ |
TO-247AC |
12500 |
全新原装,现货库存长期供应 |
询价 | ||
IR |
2015+ |
TO-247 |
19889 |
一级代理原装现货,特价热卖! |
询价 | ||
IR |
16+ |
TO-3P |
10000 |
全新原装现货 |
询价 | ||
IR |
05+ |
原厂原装 |
501 |
只做全新原装真实现货供应 |
询价 | ||
IR |
17+ |
TO-247 |
6200 |
100%原装正品现货 |
询价 |
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