INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=1200V, Vce(on)typ.=3.10V, @Vge=15V, Ic=10A)

Features • High short circuit rating optimized for motor control, tsc =10µs, VCC = 720V , TJ = 125°C, VGE = 15V • Combines low conduction losses with high switching speed • Tighter parameter distribution and higher efficiency than previous generations • IGBT co-packaged with HE

文件：212.54 Kbytes 页数：10 Pages

IRF

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

Features • High short circuit rating optimized for motor control, tsc =10µs, VCC = 720V , TJ = 125°C, VGE = 15V • Combines low conduction losses with high switching speed • Tighter parameter distribution and higher efficiency than previous generations • IGBT co-packaged with HE

文件：468.82 Kbytes 页数：10 Pages

IRF

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

文件：477.95 Kbytes 页数：11 Pages

IRF

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

文件：477.95 Kbytes 页数：11 Pages

IRF

1200V UltraFast 4-20 kHz Copack IGBT in a TO-247AC package

1200V IGBT 与超快4-20 kHz 软恢复二极管联合封装到 TO-247AC 封装中。 • 对电机控制的高短路额定值进行了优化，tsc =10µs, VCC = 720V , TJ = 125°C, VGE = 15V\n• 低通态损耗与高开关速度相结合\n• 参数分布更紧凑，效率更高\n• 与 HEXFREDTM超快、超软恢复反并联二极管联合封装的 IGBT\n• 无铅\n\n优势:\n• IGBT 提供可行的高功率密度电机控制\n• HEXFREDTM 二极管经过与 IGBT 并用优化，将噪声、EMI 和开关损耗降低;

Infineon

英飞凌

Package：TO-247-3；包装：管件 类别：分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述：IGBT 1200V 20A 100W TO247AC

Infineon

英飞凌

Package：TO-247-3；包装：卷带（TR） 类别：分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述：IGBT 1200V 20A 100W TO247AC

Infineon

英飞凌