首页 >IRG4IBC30W功率三极管>规格书列表

零件编号下载 订购功能描述/丝印制造商 上传企业LOGO

IRG4IBC30F

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE

Features •VeryLow1.59Vvotagedrop •2.5kV,60sinsulationvoltage •4.8mmcreapagedistancetoheatsink •Fast:Optimizedformediumoperating frequencies(1-5kHzinhardswitching,>20 kHzinresonantmode). •IGBTco-packagedwithHEXFREDTMultrafast, ultrasoftrecovery

IRF

International Rectifier

IRG4IBC30FD

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE

Features •VeryLow1.59Vvotagedrop •2.5kV,60sinsulationvoltage •4.8mmcreapagedistancetoheatsink •Fast:Optimizedformediumoperating frequencies(1-5kHzinhardswitching,>20 kHzinresonantmode). •IGBTco-packagedwithHEXFREDTMultrafast, ultrasoftrecovery

IRF

International Rectifier

IRG4IBC30KD

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE

IRF

International Rectifier

IRG4IBC30KDPBF

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTTECOVERYDIODE

IRF

International Rectifier

IRG4IBC30KDPBF

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE

Features •Highswitchingspeedoptimizedforupto25kHz withlowVCE(on) •ShortCircuitRating10µs@125°C,VGE=15V •Generation4IGBTdesignprovidestighter parameterdistributionandhigherefficiencythan previousgeneration •IGBTco-packagedwithHEXFREDTMultrafast,

IRF

International Rectifier

IRG4IBC30S

INSULATEDGATEBIPOLARTRANSISTOR

IRF

International Rectifier

IRG4IBC30SPBF

INSULATEDGATEBIPOLARTRANSISTOR

Features •Standard:Optimizedforminimumsaturation voltageandlowoperatingfreqencies(

IRF

International Rectifier

IRG4IBC30SPBF

INSULATEDGATEBIPOLARTRANSISTOR

IRF

International Rectifier

IRG4IBC30UD

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE

Features •2.5kV,60sinsulationvoltage •4.8mmcreapagedistancetoheatsink •UltraFast:Optimizedforhighoperating frequencies8-40kHzinhardswitching,>200 kHzinresonantmode •IGBTco-packagedwithHEXFREDTMultrafast, ultrasoftrecoveryantiparalleldiodes •Tighter

IRF

International Rectifier

IRG4IBC30UDPBF

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE

Features •2.5kV,60sinsulationvoltage •4.8mmcreapagedistancetoheatsink •UltraFast:Optimizedforhighoperating frequencies8-40kHzinhardswitching,>200 kHzinresonantmode •IGBTco-packagedwithHEXFREDTMultrafast, ultrasoftrecoveryantiparalleldiodes •Tighte

IRF

International Rectifier

供应商型号品牌批号封装库存备注价格