丝印：I2PAK；Package：TO-262；Isc N-Channel MOSFET Transistor

文件：302.45 Kbytes 页数：3 Pages

ISC

无锡固电

HEXFET Power MOSFET

Benefits ● Improved Gate, Avalanche and Dynamic dV/dt Ruggedness ● Fully Characterized Capacitance and Avalanche SOA ● Enhanced body diode dV/dt and dI/dt Capability ● Lead-Free Applications ● High Efficiency Synchronous Rectification in SMPS ● Uninterruptible Power Supply ● High Speed Pow

文件：365.32 Kbytes 页数：10 Pages

IRF

High Efficiency Synchronous Rectification in SMPS

文件：365.32 Kbytes 页数：10 Pages

IRF

isc N-Channel MOSFET Transistor

文件：247.24 Kbytes 页数：2 Pages

ISC

无锡固电

HEXFET Power MOSFET

文件：389.89 Kbytes 页数：11 Pages

IRF

Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode

Features Low VCE(ON) and switching losses Square RBSOA and maximum junction temperature 175°C Positive VCE (ON) temperature coefficient and tight distribution of parameters 5µs Short Circuit SOA Lead-Free, RoHS Compliant Benefits High efficiency in a wide range of a

文件：714.86 Kbytes 页数：14 Pages

IRF