HEXFET® Power MOSFET

Ultra Low On-Resistance Surface Mount (IRFR3910) Straight Lead (IRFU3910) Advanced Process Technology Fast Switching Fully Avalanche Rated

文件：152.52 Kbytes 页数：11 Pages

IRF

Power MOSFET(Vdss=100V, Rds=0.115ohm, Id=16A)

文件：141.83 Kbytes 页数：10 Pages

IRF

Ultra Low On-Resistance

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, p

文件：3.73438 Mbytes 页数：10 Pages

KERSEMI

isc N-Channel MOSFET Transistor

文件：247.74 Kbytes 页数：2 Pages

ISC

无锡固电