isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 9.7A@ TC=25℃ · Drain Source Voltage -VDSS= 100V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.16Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

文件：344.67 Kbytes 页数：2 Pages

ISC

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isc N-Channel MOSFET Transistor

文件：265.74 Kbytes 页数：2 Pages

ISC

无锡固电

Advanced Power MOSFET

FEATURES ■ Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 μA (Max.) @ VDS = 100V ■ Lower RDS(ON) : 0.092 Ω(Typ.)

文件：262.87 Kbytes 页数：7 Pages

Fairchild

仙童半导体

isc N-Channel MOSFET Transistor

文件：397.56 Kbytes 页数：2 Pages

ISC

无锡固电

N-CHANNEL POWER MOSFET FOR HI.REL APPLICATIONS

文件：18.73 Kbytes 页数：2 Pages

SEME-LAB