isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 17.3A@ TC=25℃ · Drain Source Voltage -VDSS= 100V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.1Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

文件：343.96 Kbytes 页数：2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

文件：265.81 Kbytes 页数：2 Pages

ISC

无锡固电

THYRISTOR/DIODE and THYRISTOR/THYRISTOR

Features ■ High Voltage ■ Electrically Isolated by DBC Ceramic ( Al2O3) ■ 3500 VRMS Isolating Voltage ■ Industrial Standard Package ■ High Surge Capability ■ Glass Passivated Chips ■ Modules uses High Voltage Power thyristor/diodes in three Basic Configurations ■ Simple Mounting ■ UL E789

文件：381.02 Kbytes 页数：12 Pages

IRF

THYRISTOR/DIODE and THYRISTOR/THYRISTOR

Features ■ High Voltage ■ Electrically Isolated by DBC Ceramic ( Al2O3) ■ 3500 VRMS Isolating Voltage ■ Industrial Standard Package ■ High Surge Capability ■ Glass Passivated Chips ■ Modules uses High Voltage Power thyristor/diodes in three Basic Configurations ■ Simple Mounting ■ UL E789

文件：391.54 Kbytes 页数：12 Pages

IRF

THYRISTOR/DIODE and THYRISTOR/THYRISTOR

Features ■ High Voltage ■ Electrically Isolated by DBC Ceramic ( Al2O3) ■ 3500 VRMS Isolating Voltage ■ Industrial Standard Package ■ High Surge Capability ■ Glass Passivated Chips ■ Modules uses High Voltage Power thyristor/diodes in three Basic Configurations ■ Simple Mounting ■ UL E789

文件：381.02 Kbytes 页数：12 Pages

IRF