Power MOSFET

• Low Gate Charge Qg Results in Simple Drive Requirement\n• Improved Gate, Avalanche and Dynamic dV/dt Ruggedness\n• Fully Characterized Capacitance and Avalanche Voltage and Current;

Vishay

威世

HEXFET® Power MOSFET

Benefits\n● Low Gate Charge Qg results in Simple Drive Requirement\n● Improved Gate, Avalanche and Dynamic dv/dt Ruggedness\n● Fully Characterized Capacitance and Avalanche Voltage and Current\n● Effective Coss Specified ( See AN 1001)

Infineon

英飞凌