11A, 400V, 0.550 Ohm, N-Channel Power MOSFET

This advanced power MOSFET is designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching c

文件：57.46 Kbytes 页数：7 Pages

INTERSIL

Power MOSFET

FEATURES • Dynamic dV/dt rating • Repetitive avalanche rated • Isolated central mounting hole • Fast switching • Ease of paralleling • Simple drive requirements • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datasheet provides inf

文件：884.71 Kbytes 页数：11 Pages

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET(Vdss=400V, Rds(on)=0.55ohm, Id=11A)

DESCRIPTION Third Generation HEXFETs from international Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Isolated Central Mounting Hole • Fast S

文件：172.76 Kbytes 页数：6 Pages

IRF

Power MOSFET

文件：1.58564 Mbytes 页数：11 Pages

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

文件：1.53122 Mbytes 页数：8 Pages

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

• Dynamic dV/dt rating\n• Repetitive avalanche rated\n• Isolated central mounting hole;

Vishay

威世

Power MOSFET(Vdss=400V, Rds(on)=0.55ohm, Id=11A)

Infineon

英飞凌

11A, 400V, 0.550 Ohm, N-Channel Power MOSFET

Renesas

瑞萨

Power MOSFET

FEATURES • Dynamic dV/dt rating • Repetitive avalanche rated • Isolated central mounting hole • Fast switching • Ease of paralleling • Simple drive requirements • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datasheet provides inf

文件：884.71 Kbytes 页数：11 Pages

VISHAYVishay Siliconix

威世威世科技公司

400V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand hi

文件：681.02 Kbytes 页数：8 Pages

FAIRCHILD

仙童半导体