Power MOSFET

FEATURES • Dynamic dV/dt rating • Repetitive avalanche rated • Isolated central mounting hole • 175 °C operating temperature • Fast switching • Ease of paralleling • Simple drive requirements • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Not

文件：525.73 Kbytes 页数：10 Pages

VishayVishay Siliconix

威世威世科技公司

Advanced Power MOSFET

FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area 175 Operating Temperature Lower Leakage Current : 10 A (Max.) @ VDS = 100V Lower RDS(ON) : 0.032Ω(Typ.)

文件：261.24 Kbytes 页数：7 Pages

Fairchild

仙童半导体

44A, 100V, 0.030 Ohm, N-Channel Power MOSFET

Features • Ultra Low On-Resistance -rDS(ON)= 0.030Ω, VGS = 10V • Simulation Models - Temperature Compensated PSPICE™ and SABER© Electrical Models - Spice and SABER© Thermal Impedance Models • Peak Current vs Pulse Width Curve • UIS Rating Curve

文件：148.84 Kbytes 页数：10 Pages

Fairchild

仙童半导体

Power MOSFET(Vdss=100V, Rds(on)=0.035W, Id=42A)

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

文件：135.04 Kbytes 页数：8 Pages

IRF

HEXFET짰 Power MOSFET

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

文件：1.03047 Mbytes 页数：9 Pages

IRF

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-247AC package is preferred for commercial-industrial applications where higher power levels preclude

文件：1.44982 Mbytes 页数：8 Pages

VishayVishay Siliconix

威世威世科技公司

HEXFET Power MOSFET

VDSS = 100V RDS(on) = 24mΩ ID = 47A Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device desig

文件：531.52 Kbytes 页数：8 Pages

IRF

HEXFET Power MOSFET

VDSS = 100V RDS(on) = 24mΩ ID = 47A Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device desig

文件：169.9 Kbytes 页数：8 Pages

IRF

Power MOSFET

文件：1.48533 Mbytes 页数：9 Pages

VishayVishay Siliconix

威世威世科技公司

Power MOSFET

文件：1.50788 Mbytes 页数：11 Pages

VishayVishay Siliconix

威世威世科技公司