6.2A and 5.4A, 600V, 1.2 and 1.6 Ohm, N-Channel Power MOSFETs

Description These are N-Channel enhancement mode silicon gate power field effect transistors. Features • 6.2A and 5.4A, 600V • rDS(ON) = 1.2Ω and 1.6Ω • Repetitive Avalanche Energy Rated • Simple Drive Requirements • Ease of Paralleling • Related Literature - TB334, “Guidelines f

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HARRIS

isc N-Channel MOSFET Transistor

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ISC

无锡固电

6.2A and 5.4A/ 600V/ 1.2 and 1.6 Ohm/ N-Channel Power MOSFETs

Renesas

瑞萨

TO220

VISHAYVishay Siliconix

威世威世科技公司

上传：深圳市旺财半导体有限公司

TO-220

VISHAY/威世

上传：深圳市华芯伟电子科技有限公司