| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
HEXFET Power MOSFET Benefits ●ImprovedGate,AvalancheandDynamicdV/dtRuggedness ●FullyCharacterizedCapacitanceandAvalancheSOA ●EnhancedbodydiodedV/dtanddI/dtCapability ●Lead-Free Applications ●HighEfficiencySynchronousRectificationinSMPS ●UninterruptiblePowerSupply ●HighSpeedPow | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
N-ChannelEnhancementModeMOSFET | HOTTECHGuangdong Hottech Co. Ltd. 合科泰广东合科泰实业有限公司 | HOTTECH | ||
N-Channel20V(D-S)MOSFET | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
N-ChannelEnhancementModeFieldEffectTransistor N-ChannelEnhancementModeFieldEffectTransistor | CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | CET | ||
N-Channel20V(D-S)MOSFET | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
N-Channel20V(D-S)MOSFET | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
N-Channel20V(D-S)MOSFET | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
N-Channel20V(D-S)MOSFET | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
N-Channel20V(D-S)MOSFET | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
Programmablewatchdogtimerwitha30msactivationdelay | Allegro Allegro MicroSystems | Allegro | ||
Programmablewatchdogtimerwitha30msactivationdelay | Allegro Allegro MicroSystems | Allegro | ||
N-Channel30-VMOSFET | ACE ACE Technology Co., LTD. | ACE | ||
ECaxialfan | EBMPAPST ebm-papst | EBMPAPST | ||
GreenTechECtubeaxialfans | EBMPAPST ebm-papst | EBMPAPST | ||
ACmaxx/i-maxx | EBMPAPST ebm-papst | EBMPAPST | ||
ProductDataSheetACi4410HHU | etc2List of Unclassifed Manufacturers etc未分类制造商etc2未分类制造商 | etc2 | ||
N-ChannelEnhancementModePowerMOSFET GeneralDescription TheadvancedpowerMOSFETprovidesthedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheSO-8packageisuniversallypreferredforallcommercial-industrialsurfacemountapplicationsandsuitedf | ANACHIP 易亨易亨电子股份有限公司 | ANACHIP | ||
N-ChannelEnhancementModePowerMOSFET GeneralDescription TheadvancedpowerMOSFETprovidesthedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheSO-8packageisuniversallypreferredforallcommercial-industrialsurfacemountapplicationsandsuitedf | ANACHIP 易亨易亨电子股份有限公司 | ANACHIP | ||
N-ChannelEnhancementModePowerMOSFET GeneralDescription TheadvancedpowerMOSFETprovidesthedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheSO-8packageisuniversallypreferredforallcommercial-industrialsurfacemountapplicationsandsuitedf | ANACHIP 易亨易亨电子股份有限公司 | ANACHIP | ||
N-ChannelEnhancementModePowerMOSFET GeneralDescription TheadvancedpowerMOSFETprovidesthedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheSO-8packageisuniversallypreferredforallcommercial-industrialsurfacemountapplicationsandsuitedf | ANACHIP 易亨易亨电子股份有限公司 | ANACHIP |
详细参数
- 型号：
IRFB4410P
- 功能描述：
MOSFET MOSFT 100V 96A 10mOhm 120nC
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶体管极性：
N-Channel
- 汲极/源极击穿电压：
650 V
- 闸/源击穿电压：
25 V
- 漏极连续电流：
130 A 电阻汲极/源极
- RDS（导通）：
0.014 Ohms
- 配置：
Single
- 安装风格：
Through Hole
- 封装/箱体：
Max247
- 封装：
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
23+ |
TO-220 |
20540 |
保证进口原装现货假一赔十 |
询价 | ||
IR |
2020+ |
TO-220 |
9600 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
询价 | ||
IR |
2020+ |
TO-220 |
22000 |
全新原装正品 现货库存 价格优势 |
询价 | ||
INFINEON/IR |
1907+ |
NA |
300 |
20年老字号,原装优势长期供货 |
询价 | ||
Infineon Technologies |
24+ |
TO-220AB |
30000 |
晶体管-分立半导体产品-原装正品 |
询价 | ||
IR |
24+ |
TO-220 |
15000 |
全新原装的现货 |
询价 | ||
IR |
16+ |
TO-220 |
6110 |
全新原装/深圳现货库2 |
询价 | ||
IR |
15+ |
TO220 |
25000 |
原装进口现货,假一罚十 |
询价 | ||
IR |
23+ |
TO-220 |
65400 |
询价 | |||
IR/INFINEON |
18+ |
TO-220 |
300 |
只做进口原装假一赔百 |
询价 |
相关规格书
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- IRFB4510PBF
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相关库存
更多- IRFB4410ZPBF
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- IRFD220
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- IRFD320PBF
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