FETKY??MOSFET / Schottky Diode(Vdss=20V, Rds(on)=0.135ohm, Schottky Vf=0.39V)

Description The FETKYTM family of co-packaged HEXFETs and Schottky diodes offer the designer an innovative board space saving solution for switching regulator applications. Generation 5 HEXFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. Combini

文件：177.91 Kbytes 页数：8 Pages

IRF

Power MOSFET and Schottky Diode

Description The new Micro8TM package, with half the footprint area of the standard SO-8, provides the smallest footprint available in an SOIC outline. This makes the Micro8TM an ideal device for applications where printed circuit board space is at a premium. The low profile ( ● Power MOSFET and

文件：727.6 Kbytes 页数：8 Pages

KERSEMI

Co-packaged HEXFET짰 Power MOSFET and Schottky Diode

Description The FETKY™ family of co-packaged HEXFETs and Schottky diodes offer the designer an innovative board space saving solution for switching regulator applications. Generation 5 HEXFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. Combinin

文件：199.15 Kbytes 页数：8 Pages

IRF

FETKY™ MOSFET / Schottky Diode(Vdss=20V, Rds(on)=0.135ohm, Schottky Vf=0.39V)

Infineon

英飞凌