丝印：IRF7416；Package：SOP-8；P-Channel 30 V (D-S) MOSFET

Low On-Resistance P-Channel Mosfet Surface Mount dv/dt Rating Fast Switching FEATURES

文件：435.63 Kbytes 页数：8 Pages

UMW

友台半导体

丝印：IRF7416；Package：SOP-8；P-Channel 30 V (D-S) MOSFET

FEATURES Low On-Resistance P-Channel Mosfet Surface Mount dv/dt Rating Fast Switching

文件：336.68 Kbytes 页数：8 Pages

EVVOSEMI

翊欧

丝印：IRF7416；Package：SOP-8；P-Channel 30 V (D-S) MOSFET

Low On-Resistance P-Channel Mosfet Surface Mount dv/dt Rating Fast Switching FEATURES

文件：435.63 Kbytes 页数：8 Pages

UMW

友台半导体

丝印：IRF7416；Package：SOP-8；P-Channel 30 V (D-S) MOSFET

Low On-Resistance P-Channel Mosfet Surface Mount dv/dt Rating Fast Switching FEATURES

文件：435.63 Kbytes 页数：8 Pages

UMW

友台半导体

丝印：IRF7416；Package：SOP-8；P-Channel 30 V (D-S) MOSFET

Low On-Resistance P-Channel Mosfet Surface Mount dv/dt Rating Fast Switching FEATURES

文件：435.63 Kbytes 页数：8 Pages

UMW

友台半导体

丝印：IRF7416；Package：SOP-8；P-Channel 30 V (D-S) MOSFET

FEATURES Low On-Resistance P-Channel Mosfet Surface Mount dv/dt Rating Fast Switching

文件：336.68 Kbytes 页数：8 Pages

EVVOSEMI

翊欧

P-Channel 30 V (D-S) MOSFET

FEATURES Low On-Resistance P-Channel Mosfet Surface Mount dv/dt Rating Fast Switching

文件：336.68 Kbytes 页数：8 Pages

EVVOSEMI

翊欧

Power MOSFET(Vdss=-30V, Rds(on)=0.02ohm)

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

文件：116.36 Kbytes 页数：9 Pages

IRF

HEXFET Power MOSFET

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

文件：201.72 Kbytes 页数：9 Pages

IRF

Generation V Technology

文件：241.88 Kbytes 页数：9 Pages

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