| 型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
HEXFET Power MOSFET Description Fourth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for 文件：166.22 Kbytes 页数：9 Pages | IRF | IRF | ||
HEXFET Power MOSFET Features • Adavanced Process Technology • Ultra Low On-Resistance • P-Channel MOSFET • Surface Mount • Dynamic dv/dt Rating • Fast Switching 文件：65.04 Kbytes 页数：2 Pages | KEXIN 科信电子 | KEXIN | ||
P-Channel MOSFET Features • Adavanced Process Technology • Ultra Low On-Resistance • P-Channel MOSFET • Surface Mount • Dynamic dv/dt Rating • Fast Switching 文件：1.92775 Mbytes 页数：5 Pages | KEXIN 科信电子 | KEXIN | ||
Adavanced Process Technology Description Fourth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, 文件：278.95 Kbytes 页数：9 Pages | IRF | IRF | ||
HEXFET Power MOSFET Description Fourth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, 文件：277.82 Kbytes 页数：9 Pages | IRF | IRF | ||
Adavanced Process Technology Description Fourth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, 文件：278.95 Kbytes 页数：9 Pages | IRF | IRF | ||
HEXFET Power MOSFET Description Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well kn 文件：89.88 Kbytes 页数：7 Pages | IRF | IRF | ||
Generation 5 Technology Description Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well kn 文件：91.61 Kbytes 页数：7 Pages | IRF | IRF | ||
HEXFET짰 Power MOSFET Description Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well kn 文件：150.26 Kbytes 页数：7 Pages | IRF | IRF | ||
Generation 5 Technology Description Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well kn 文件：91.61 Kbytes 页数：7 Pages | IRF | IRF |
技术参数
- OPN：
IRF7201TRPBF
- Qualification：
Non-Automotive
- Package name：
SO8
- VDS max：
30 V
- RDS (on) @10V max：
30 mΩ
- RDS (on) @4.5V max：
50 mΩ
- ID @25°C max：
7.3 A
- QG typ @10V：
19 nC
- Polarity：
N
- VGS(th) min：
1 V
- Technology：
IR MOSFET™
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
INFINEON/英飞凌 |
25+ |
TO-220 |
45000 |
INFINEON/英飞凌全新现货IRF720即刻询购立享优惠#长期有排单订 |
询价 | ||
ONSEMI |
25+ |
N/A |
21000 |
正规渠道,免费送样。支持账期,BOM一站式配齐 |
询价 | ||
IR |
2015+ |
TO-220 |
19889 |
一级代理原装现货,特价热卖! |
询价 | ||
IR |
24+ |
TO-220 |
5000 |
询价 | |||
IR |
17+ |
TO-220 |
6200 |
询价 | |||
IR |
06+ |
TO-220 |
8000 |
原装 |
询价 | ||
IR |
15+ |
TO-220 |
11560 |
全新原装,现货库存,长期供应 |
询价 | ||
ir |
24+ |
N/A |
6980 |
原装现货,可开13%税票 |
询价 | ||
IR |
24+ |
原厂封装 |
2000 |
原装现货假一罚十 |
询价 | ||
IR |
16+ |
TO-220 |
10000 |
全新原装现货 |
询价 |
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