丝印：IRF7204；Package：SOP-8；- 30V P - Channel Enhancement Mode MOSFET

General Description: The IRF7204 is the single P-Channel logic enhancement mode power field effect transistors to provide excellent RDS(on), low gate charge and low gate resistance. It’s up to -30V operation voltage is well suited in switching mode power supply, SMPS, notebook computer power m

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EVVOSEMI

翊欧

丝印：IRF7204；Package：SOP-8；- 30V P - Channel Enhancement Mode MOSFET

Features: RDS(ON)

文件：1.52782 Mbytes 页数：7 Pages

UMW

友台半导体

3.3A, 400V, 1.800 Ohm, N-Channel Power MOSFET

This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching re • 3.3A, 400V\n• rDS(ON) = 1.800Ω\n• Single Pulse Avalanche Energy Rated\n• SOA is Power Dissipation Limited\n• Nanosecond Switching Speeds\n• Linear Transfer Characteristics\n• High Input Impedance\n• Related Literature\n   - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” ;

Renesas

瑞萨

Power MOSFET

• Dynamic dV/dt rating\n• Repetitive avalanche rated\n• Fast switching;

Vishay

威世

HEXFET Power MOSFET

Infineon

英飞凌

HEXFET Power MOSFET

Description Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET MOSFETs are well known fo

文件：114.26 Kbytes 页数：7 Pages

IRF

HEXFET짰 Power MOSFET

Description Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET MOSFETs are well known fo

文件：173.99 Kbytes 页数：7 Pages

IRF

Generation V Technology

Description Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET MOSFETs are well known fo

文件：119.84 Kbytes 页数：7 Pages

IRF

Power MOSFET(Vdss=-20V, Rds(on)=0.060ohm, Id=-5.3A)

Description Fourth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for

文件：145.18 Kbytes 页数：9 Pages

IRF

HEXFET짰 Power MOSFET

Description Fourth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for,

文件：243.67 Kbytes 页数：9 Pages

IRF