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IRF630PBF

N-Channel200V(D-S)MOSFET

FEATURES •175°CJunctionTemperature •PWMOptimized •100RgTested •ComplianttoRoHSDirective2002/95/EC APPLICATIONS •PrimarySideSwitch •DT-TrenchPowerMOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半导体微碧半导体(台湾)有限公司

IRF630S

N-CHANNEL200V-0.35ohm-9A-D2PAKMESHOVERLAY]MOSFET

DESCRIPTION ThispowerMOSFETisdesignedusingthecompany’sconsolidatedstriplayout-basedMESHOVERLAYprocess.Thistechnologymatchesandimprovestheperformancescomparedwithstandardpartsfromvarioussources. ■TYPICALRDS(on)=0.35Ω ■EXTREMELYHIGHdv/dtCAPABILITY ■100A

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

IRF630S

PowerMOSFET

PowerMOSFET VDSS=200V,RDS(on)=0.40ohm,ID=9.0A

TELTokyo Electron Ltd.

东电电子东京电子有限公司

IRF630S

N-channelTrenchMOStransistor

GENERALDESCRIPTION N-channel,enhancementmodefield-effectpowertransistorusingTrenchtechnology,intendedforuseinoff-lineswitchedmodepowersupplies,T.V.andcomputermonitorpowersupplies,d.c.tod.c.converters,motorcontrolcircuitsandgeneralpurposeswitchingapplications.

PhilipsPhilips Semiconductors

飞利浦荷兰皇家飞利浦

IRF630S

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheD2PAKisasurfacemountpowerpackagecapableofaccommodatingdiesizesuptoHEX-4.Itprovidesthe

VishayVishay Siliconix

威世科技威世科技半导体

IRF630S

N-ChannelMOSFET

■Features ●VDS(V)=200V ●ID=9A(VGS=10V) ●RDS(ON)

KEXINGuangdong Kexin Industrial Co.,Ltd

科信电子广东科信实业有限公司

IRF630S

N-channelTrenchMOStransistor

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

IRF630S

PowerMOSFET

FEATURES •Halogen-freeAccordingtoIEC61249-2-21Definition •SurfaceMount •AvailableinTapeandReel •DynamicdV/dtRating •RepetitiveAvalancheRated •FastSwitching •EaseofParalleling •SimpleDriveRequirements •ComplianttoRoHSDirective2002/95/EC

VBSEMIVBsemi Electronics Co.,Ltd

微碧半导体微碧半导体(台湾)有限公司

IRF630S

PowerMOSFET

FEATURES •Surface-mount •Availableintapeandreel •Dynamicdv/dtrating •Repetitiveavalancherated •Fastswitching •Easeofparalleling •Simpledriverequirements •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note *Thisdatashee

VishayVishay Siliconix

威世科技威世科技半导体

IRF630SPBF

HEXFETPOWERMOSFET(VDSS=200V,RDS(on)=0.40廓,ID=9.0A)

IRF

International Rectifier

详细参数

  • 型号:

    IRF630L

  • 功能描述:

    MOSFET N-CH 200V 9A TO-262

  • RoHS:

  • 类别:

    分离式半导体产品 >> FET - 单

  • 系列:

    -

  • 标准包装:

    1,000

  • 系列:

    MESH OVERLAY™ FET

  • 型:

    MOSFET N 通道,金属氧化物 FET

  • 特点:

    逻辑电平门

  • 漏极至源极电压(Vdss):

    200V 电流 - 连续漏极(Id) @ 25°

  • C:

    18A 开态Rds(最大)@ Id, Vgs @ 25°

  • C:

    180 毫欧 @ 9A,10V Id 时的

  • Vgs(th)(最大):

    4V @ 250µA 闸电荷(Qg) @

  • Vgs:

    72nC @ 10V 输入电容(Ciss) @

  • Vds:

    1560pF @ 25V 功率 -

  • 最大:

    40W

  • 安装类型:

    通孔

  • 封装/外壳:

    TO-220-3 整包

  • 供应商设备封装:

    TO-220FP

  • 包装:

    管件

供应商型号品牌批号封装库存备注价格
INTERNATIONA
05+
原厂原装
7215
只做全新原装真实现货供应
询价
VISHAY
1503+
TO-262
3000
就找我吧!--邀您体验愉快问购元件!
询价
Vishay Siliconix
22+
TO2623 Long Leads I2Pak TO262A
9000
原厂渠道,现货配单
询价
Vishay Siliconix
23+
TO2623 Long Leads I2Pak TO262A
9000
原装正品,支持实单
询价
Vishay Siliconix
2022+
TO-262-3,长引线,I2Pak,TO-26
38550
全新原装 支持表配单 中国著名电子元器件独立分销
询价
IR
23+
8000
只做原装现货
询价
IR
23+
7000
询价
ST
23+
TO-220
9562
询价
ST
2016+
TO-220
6528
房间原装进口现货假一赔十
询价
ST
2015+
TO220A
12500
全新原装,现货库存长期供应
询价
更多IRF630L供应商 更新时间2025-7-24 17:05:00