| 型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
AUTOMOTIVE MOSFET Description Stripe Planar design of HEXFET® Power MOSFETs utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET are a 175°C junction operating temperature, fast switching speed and improved repetitive av 文件：3.92361 Mbytes 页数：11 Pages | KERSEMI | KERSEMI | ||
AUTOMOTIVE MOSFET ( VDSS = 55V , RDS(on) = 5.3m廓 , ID = 131A ) Description Stripe Planar design of HEXFET® Power MOSFETs utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET are a 175°C junction operating temperature, fast switching speed and improved repetitive av 文件：240.27 Kbytes 页数：12 Pages | IRF | IRF | ||
AUTOMOTIVE MOSFET VDSS = 55V RDS(on) = 4.9mΩ ID = 75A Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temp 文件：291.64 Kbytes 页数：12 Pages | IRF | IRF | ||
AUTOMOTIVE MOSFET VDSS = 55V RDS(on) = 4.9mΩ ID = 75A Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temp 文件：291.64 Kbytes 页数：12 Pages | IRF | IRF | ||
AUTOMOTIVE MOSFET VDSS = 55V RDS(on) = 4.9mΩ ID = 120A Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating tem 文件：688.27 Kbytes 页数：11 Pages | IRF | IRF | ||
HEXFET짰 Power MOSFET ( VDSS = 55V , RDS(on) = 4.9m廓 , ID = 120A ) VDSS = 55V RDS(on) = 4.9mΩ ID = 120A Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating tem 文件：696.52 Kbytes 页数：12 Pages | IRF | IRF | ||
AUTOMOTIVE MOSFET ( VDSS = 55V , RDS(on) = 4.9m廓 , ID = 75A ) VDSS = 55V RDS(on) = 4.9mΩ ID = 75A Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temp 文件：812.24 Kbytes 页数：13 Pages | IRF | IRF | ||
AUTOMOTIVE MOSFET ( VDSS = 55V , RDS(on) = 4.9m廓 , ID = 75A ) VDSS = 55V RDS(on) = 4.9mΩ ID = 75A Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temp 文件：812.24 Kbytes 页数：13 Pages | IRF | IRF | ||
AUTOMOTIVE MOSFET VDSS = 55V RDS(on) = 4.9mΩ ID = 75A Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temp 文件：291.64 Kbytes 页数：12 Pages | IRF | IRF | ||
AUTOMOTIVE MOSFET VDSS = 55V RDS(on) = 4.9mΩ ID = 120A Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating tem 文件：688.27 Kbytes 页数：11 Pages | IRF | IRF |
技术参数
- OPN：
IRF1405PBF
- Qualification：
Non-Automotive
- Package name：
TO220
- VDS max：
55 V
- RDS (on) @10V max：
5.3 mΩ
- ID @25°C max：
169 A
- QG typ @10V：
170 nC
- Special Features：
Wide SOA
- Polarity：
N
- VGS(th) min：
2 V
- VGS(th) max：
4 V
- VGS(th)：
3 V
- Technology：
IR MOSFET™
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
13+ |
TO-220/TO-263 |
10000 |
深圳市勤思达科技有限公司主营IR系列全新原装正品,公司现货供应IRF1405,IRF1405PBF ,IRF1405STR,欢迎咨询洽谈。 |
询价 | ||
IR |
2024+ |
N/A |
70000 |
柒号只做原装 现货价秒杀全网 |
询价 | ||
IR |
06+ |
TO-220 |
5000 |
全新原装 绝对有货 |
询价 | ||
IR |
24+ |
TO-220 |
61490 |
询价 | |||
IR |
24+ |
原厂封装 |
2000 |
原装现货假一罚十 |
询价 | ||
IR |
16+ |
TO-220 |
10000 |
全新原装现货 |
询价 | ||
IR |
2015+ |
SOP/DIP |
19889 |
一级代理原装现货,特价热卖! |
询价 | ||
IOR |
25+ |
to-220 |
2987 |
绝对全新原装现货供应! |
询价 | ||
IR |
23+ |
TO-220 |
11846 |
一级代理商现货批发,原装正品,假一罚十 |
询价 | ||
IR |
25+23+ |
TO-220 |
24399 |
绝对原装正品全新进口深圳现货 |
询价 |
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