MOSFETs and JFETs

TT Electronics

N-Channel Power MOSFETs, 27 A, 60-100V

文件：146.34 Kbytes 页数：5 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Power MOSFET(Vdss=40V, Rds(on)=0.004ohm, Id=162A??

Description Seventh Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well kn

文件：107.46 Kbytes 页数：8 Pages

IRF

Advanced Process Technology Ultra Low On-Resistance

Description Seventh Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well kn

文件：2.99281 Mbytes 页数：8 Pages

KERSEMI

isc N-Channel Mosfet Transistor

Description Seventh Generation HEXFET ® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well k

文件：139.55 Kbytes 页数：2 Pages

ISC

无锡固电

Ultra Low On-Resistance

Description The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on resistance in any existing surface mount package. l Advanced Process Technology l Ultra Low On-Resistance l Dynam

文件：1.19651 Mbytes 页数：10 Pages

KERSEMI

Power MOSFET(Vdss=40V, Rds(on)=0.004ohm, Id=162A??

Description Seventh Generation HEXFET®Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temp

文件：306.92 Kbytes 页数：10 Pages

IRF

AUTOMOTIVE MOSFET

Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Features Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature

文件：329.6 Kbytes 页数：12 Pages

IRF

HEXFET짰 Power MOSFET

Description Seventh Generation HEXFETÆPower MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperat

文件：279.7 Kbytes 页数：11 Pages

IRF

HEXFET짰 Power MOSFET

Description Seventh Generation HEXFETÆPower MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature

文件：3.89112 Mbytes 页数：10 Pages

KERSEMI