IRF140资料datasheet下载市场行情IRF第4页-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
IRF1404Z	文件：306.06 Kbytes Page：12 Pages	Advanced Process Technology Description This HEXFET®Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating.These features combi 文件：306.06 Kbytes 页数：12 Pages	IRF	IRF
IRF1404Z	文件：329.6 Kbytes Page：12 Pages	AUTOMOTIVE MOSFET Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Features Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature 文件：329.6 Kbytes 页数：12 Pages	IRF	IRF
IRF1404ZL	文件：4.6855 Mbytes Page：12 Pages	AUTOMOTIVE MOSFET Advanced Process Technology Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and impro 文件：4.6855 Mbytes 页数：12 Pages	KERSEMI	KERSEMI
IRF1404ZL	文件：306.06 Kbytes Page：12 Pages	Advanced Process Technology Description This HEXFET®Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating.These features combi 文件：306.06 Kbytes 页数：12 Pages	IRF	IRF
IRF1404ZLPBF	文件：307.88 Kbytes Page：12 Pages	Advanced Process Technology Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Features Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature 文件：307.88 Kbytes 页数：12 Pages	IRF	IRF
IRF1404ZLPBF	文件：329.6 Kbytes Page：12 Pages	AUTOMOTIVE MOSFET Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Features Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature 文件：329.6 Kbytes 页数：12 Pages	IRF	IRF
IRF1404ZPBF	文件：329.6 Kbytes Page：12 Pages	AUTOMOTIVE MOSFET Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Features Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature 文件：329.6 Kbytes 页数：12 Pages	IRF	IRF
IRF1404ZPBF	文件：307.88 Kbytes Page：12 Pages	Advanced Process Technology Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Features Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature 文件：307.88 Kbytes 页数：12 Pages	IRF	IRF
IRF1404ZS	文件：4.6855 Mbytes Page：12 Pages	AUTOMOTIVE MOSFET Advanced Process Technology Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and impro 文件：4.6855 Mbytes 页数：12 Pages	KERSEMI	KERSEMI
IRF1404ZS	文件：306.06 Kbytes Page：12 Pages	Advanced Process Technology Description This HEXFET®Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating.These features combi 文件：306.06 Kbytes 页数：12 Pages	IRF	IRF

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技术参数

OPN：
IRF1404PBF
Qualification：
Non-Automotive
Package name：
TO220
VDS max：
40 V
RDS (on) @10V max：
4 mΩ
ID @25°C max：
202 A
QG typ @10V：
131 nC
Special Features：
Wide SOA
Polarity：
N
VGS(th) min：
2 V
VGS(th) max：
4 V
VGS(th)：
3 V
Technology：
IR MOSFET™

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市科恒伟业电子有限公司	IRF140	IR	24+	VQFN	7850	只做原装正品现货或订货假一赔十!	询价
深圳市一线半导体有限公司	IRF140	IR	24+	TO-3	10000		询价
芯有半导体（深圳）有限公司	IRF140	MOT	05+	原厂原装	4236	只做全新原装真实现货供应	询价
深圳市弘为电子有限公司	IRF140	IR/MOT	24+	TO-3	1000	原装现货假一罚十	询价
深圳市卓越微芯电子有限公司	IRF140	IR	25+	TO-3	30	百分百原装正品真实公司现货库存本公司只做原装可	询价
深圳市福田区绿盛电子商行	IRF140	IR	2015+	TO-3(铁帽)	19889	一级代理原装现货,特价热卖!	询价
深圳市达恩科技有限公司	IRF140	Magnatec	24+	NA	3000	进口原装正品优势供应	询价
上海金庆电子技术有限公司	IRF140	UNMARKED	新		11	全新原装货期两周	询价
深圳市振宏微科技有限公司	IRF140	IR	23+	NA	113	专做原装正品,假一罚百!	询价
深圳市华斯顿科技有限公司	IRF140	IR	25+23+	TO-3	20899	绝对原装正品全新进口深圳现货	询价

更多IRF140供应商更新时间2026-1-18 13:02:00

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