OptiMOS짰2 Power-Transistor

文件：417.75 Kbytes 页数：12 Pages

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OptiMOS®2 Power-Transistor

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英飞凌

OptiMOS 2 Power-Transistor

Package Marking • Qualified according to JEDEC1) for target applications • N-channel, logic level • Excellent gate charge x R DS(on) product (FOM) • Superior thermal resistance • 175 °C operating temperature • Pb-free lead plating; RoHS compliant

文件：434.02 Kbytes 页数：11 Pages

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英飞凌

OptiMOS 2 Power-Transistor

Package Marking • Qualified according to JEDEC1) for target applications • N-channel, logic level • Excellent gate charge x R DS(on) product (FOM) • Superior thermal resistance • 175 °C operating temperature • Pb-free lead plating; RoHS compliant

文件：199.95 Kbytes 页数：9 Pages

Infineon

英飞凌

OptiMOS짰2 Power-Transistor

Package Marking • Qualified according to JEDEC1) for target applications • N-channel, logic level • Excellent gate charge x R DS(on) product (FOM) • Superior thermal resistance • 175 °C operating temperature • Pb-free lead plating; RoHS compliant

文件：418.45 Kbytes 页数：12 Pages

Infineon

英飞凌