DUAL PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR

Features • Epitaxial Planar Die Construction • Complementary NPN Type Available (IMX8) • Small Surface Mount Package • Lead Free/RoHS Compliant (Note 3) • Green Device, Note 4 and 5

文件：78.78 Kbytes 页数：3 Pages

DIODES

美台半导体

丝印：T4；Package：SOT-26；General purpose (dual transistors)

Features 1) Two 2SA1514K chips in an AMT package. 2) High breakdown voltage.

文件：54.45 Kbytes 页数：1 Pages

ROHM

罗姆

丝印：T4；Package：SOT-26；General purpose (dual transistors)

Features 1) Two 2SA1514K chips in an AMT package. 2) High breakdown voltage.

文件：71.05 Kbytes 页数：3 Pages

ROHM

罗姆

丝印：T4；Package：SMT6；General purpose (dual transistors)

Features 1) Two 2SA1514K chips in an AMT package. 2) High breakdown voltage.

文件：59.39 Kbytes 页数：3 Pages

ROHM

罗姆

DUAL PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR

文件：455.11 Kbytes 页数：4 Pages

DIODES

美台半导体

丝印：40R011M2；Package：PG-HSOF-8；CoolSiC™ 400V CoolSiC™ G2 MOSFET

Features • Ideal for high frequency switching and synchronous rectification • Commutation robust fast body diode with low Qfr • Low RDS(on) dependency on temperature • Benchmark gate threshold voltage, VGS(th) = 4.5 V • Recommended gate driving voltage 0 V to 18 V • .XT interconnection techn

文件：1.25941 Mbytes 页数：15 Pages

Infineon

英飞凌

丝印：40R015M2；Package：PG-HSOF-8；CoolSiC™ 400V CoolSiC™ G2 MOSFET

Features • Ideal for high frequency switching and synchronous rectification • Commutation robust fast body diode with low Qfr • Low RDS(on) dependency on temperature • Benchmark gate threshold voltage, VGS(th) = 4.5 V • Recommended gate driving voltage 0 V to 18 V • .XT interconnection techn

文件：1.26491 Mbytes 页数：15 Pages

Infineon

英飞凌

CoolSiC™ 400V CoolSiC™ G2 MOSFET

Features • Ideal for high frequency switching and synchronous rectification • Commutation robust fast body diode with low Qfr • Low RDS(on) dependency on temperature • Benchmark gate threshold voltage, VGS(th) = 4.5 V • Recommended gate driving voltage 0 V to 18 V • .XT interconnection techn

文件：1.26491 Mbytes 页数：15 Pages

Infineon

英飞凌

丝印：40R025M2；Package：PG-HSOF-8；CoolSiC™ 400V CoolSiC™ G2 MOSFET

Features • Ideal for high frequency switching and synchronous rectification • Commutation robust fast body diode with low Qfr • Low RDS(on) dependency on temperature • Benchmark gate threshold voltage, VGS(th) = 4.5 V • Recommended gate driving voltage 0 V to 18 V • .XT interconnection techn

文件：1.26278 Mbytes 页数：15 Pages

Infineon

英飞凌

丝印：40R036M2；Package：PG-HSOF-8；CoolSiC™ 400V CoolSiC™ G2 MOSFET

Features • Ideal for high frequency switching and synchronous rectification • Commutation robust fast body diode with low Qfr • Low RDS(on) dependency on temperature • Benchmark gate threshold voltage, VGS(th) = 4.5 V • Recommended gate driving voltage 0 V to 18 V • .XT interconnection techn

文件：1.26056 Mbytes 页数：15 Pages

Infineon

英飞凌