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71V65603S100BG

256Kx36,512Kx183.3VSynchronousZBT™SRAMsZBT™Feature3.3VI/O,BurstCounterPipelinedOutputs

Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-150MHz (3.8nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandreadcycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/W(

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

71V65603S100BGI

256Kx36,512Kx183.3VSynchronousZBT™SRAMsZBT™Feature3.3VI/O,BurstCounterPipelinedOutputs

Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-150MHz (3.8nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandreadcycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/W(

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

71V65603S100BQ

256Kx36,512Kx183.3VSynchronousZBT™SRAMsZBT™Feature3.3VI/O,BurstCounterPipelinedOutputs

Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-150MHz (3.8nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandreadcycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/W(

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

71V65603S100BQG

256Kx36,512Kx183.3VSynchronousZBT™SRAMsZBT™Feature3.3VI/O,BurstCounterPipelinedOutputs

Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-150MHz (3.8nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandreadcycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/W(

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

71V65603S100BQGI

256Kx36,512Kx183.3VSynchronousZBT™SRAMsZBT™Feature3.3VI/O,BurstCounterPipelinedOutputs

Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-150MHz (3.8nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandreadcycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/W(

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

71V65603S100BQI

256Kx36,512Kx183.3VSynchronousZBT™SRAMsZBT™Feature3.3VI/O,BurstCounterPipelinedOutputs

Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-150MHz (3.8nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandreadcycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/W(

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

71V65603S100PFG

256Kx36,512Kx183.3VSynchronousZBT™SRAMsZBT™Feature3.3VI/O,BurstCounterPipelinedOutputs

Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-150MHz (3.8nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandreadcycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/W(

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

71V65603S100PFGI

256Kx36,512Kx183.3VSynchronousZBT™SRAMsZBT™Feature3.3VI/O,BurstCounterPipelinedOutputs

Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-150MHz (3.8nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandreadcycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/W(

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

IDT71V65603S100BG

256Kx36,512Kx183.3VSynchronousZBTSRAMs

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT71V65603S100BGI

256Kx36,512Kx183.3VSynchronousZBTSRAMs

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT71V65603S100BQ

256Kx36,512Kx183.3VSynchronousZBTSRAMs

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT71V65603S100BQI

256Kx36,512Kx183.3VSynchronousZBTSRAMs

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT71V65603S100PF

256Kx36,512Kx183.3VSynchronousZBTSRAMs

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT71V65603S100PFI

256Kx36,512Kx183.3VSynchronousZBTSRAMs

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

详细参数

  • 型号:

    IDT71V65603S100PFG

  • 功能描述:

    IC SRAM 9MBIT 100MHZ 100TQFP

  • RoHS:

  • 类别:

    集成电路(IC) >> 存储器

  • 系列:

    -

  • 标准包装:

    3,000

  • 系列:

    - 格式 -

  • 存储器:

    EEPROMs - 串行

  • 存储器类型:

    EEPROM

  • 存储容量:

    32K(4K x 8)

  • 速度:

    100kHz,400kHz

  • 接口:

    I²C,2 线串口

  • 电源电压:

    2.5 V ~ 5.5 V

  • 工作温度:

    -40°C ~ 125°C

  • 封装/外壳:

    8-SOIC(0.154,3.90mm 宽)

  • 供应商设备封装:

    8-SOIC

  • 包装:

    带卷(TR)

  • 其它名称:

    CAV24C32WE-GT3OSTR

供应商型号品牌批号封装库存备注价格
IDT
23+
QFP
8000
全新原装现货,欢迎来电咨询
询价
IDT
23+
100-TQFP(14x20)
73390
专业分销产品!原装正品!价格优势!
询价
IDT
21+
QFP
50000
全新原装正品现货,支持订货
询价
IDT
22+
100TQFP (14x20)
9000
原厂渠道,现货配单
询价
IDT
21+
100TQFP (14x20)
13880
公司只售原装,支持实单
询价
IDT
23+
100TQFP (14x20)
9000
原装正品,支持实单
询价
IDT
11+
QFP
15
一级代理,专注军工、汽车、医疗、工业、新能源、电力
询价
IDT
TQFP-100
68500
一级代理 原装正品假一罚十价格优势长期供货
询价
IDT
22+
QFP
600
只做原装,支持实单,来电咨询。
询价
IDT
11+
QFP
148
全新原装 实单必成
询价
更多IDT71V65603S100PFG供应商 更新时间2024-4-29 9:23:00