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IDT71V65603S100BQI

256K x 36, 512K x 18 3.3V Synchronous ZBT SRAMs

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT

71V65603S100BG

256Kx36,512Kx183.3VSynchronousZBT™SRAMsZBT™Feature3.3VI/O,BurstCounterPipelinedOutputs

Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-150MHz (3.8nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandreadcycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/W(

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

71V65603S100BGI

256Kx36,512Kx183.3VSynchronousZBT™SRAMsZBT™Feature3.3VI/O,BurstCounterPipelinedOutputs

Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-150MHz (3.8nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandreadcycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/W(

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

71V65603S100BQ

256Kx36,512Kx183.3VSynchronousZBT™SRAMsZBT™Feature3.3VI/O,BurstCounterPipelinedOutputs

Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-150MHz (3.8nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandreadcycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/W(

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

71V65603S100BQG

256Kx36,512Kx183.3VSynchronousZBT™SRAMsZBT™Feature3.3VI/O,BurstCounterPipelinedOutputs

Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-150MHz (3.8nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandreadcycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/W(

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

71V65603S100BQGI

256Kx36,512Kx183.3VSynchronousZBT™SRAMsZBT™Feature3.3VI/O,BurstCounterPipelinedOutputs

Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-150MHz (3.8nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandreadcycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/W(

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

71V65603S100BQI

256Kx36,512Kx183.3VSynchronousZBT™SRAMsZBT™Feature3.3VI/O,BurstCounterPipelinedOutputs

Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-150MHz (3.8nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandreadcycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/W(

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

71V65603S100PFG

256Kx36,512Kx183.3VSynchronousZBT™SRAMsZBT™Feature3.3VI/O,BurstCounterPipelinedOutputs

Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-150MHz (3.8nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandreadcycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/W(

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

71V65603S100PFGI

256Kx36,512Kx183.3VSynchronousZBT™SRAMsZBT™Feature3.3VI/O,BurstCounterPipelinedOutputs

Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-150MHz (3.8nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandreadcycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/W(

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

IDT71V65603S100BG

256Kx36,512Kx183.3VSynchronousZBTSRAMs

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT

IDT71V65603S100BGI

256Kx36,512Kx183.3VSynchronousZBTSRAMs

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT

IDT71V65603S100BQ

256Kx36,512Kx183.3VSynchronousZBTSRAMs

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT

IDT71V65603S100PF

256Kx36,512Kx183.3VSynchronousZBTSRAMs

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT

IDT71V65603S100PFI

256Kx36,512Kx183.3VSynchronousZBTSRAMs

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT

详细参数

  • 型号:

    IDT71V65603S100BQI

  • 功能描述:

    IC SRAM 9MBIT 100MHZ 165FBGA

  • RoHS:

  • 类别:

    集成电路(IC) >> 存储器

  • 系列:

    -

  • 标准包装:

    72

  • 系列:

    - 格式 -

  • 存储器:

    RAM

  • 存储器类型:

    SRAM - 同步

  • 存储容量:

    9M(256K x 36)

  • 速度:

    75ns

  • 接口:

    并联

  • 电源电压:

    3.135 V ~ 3.465 V

  • 工作温度:

    -40°C ~ 85°C

  • 封装/外壳:

    100-LQFP

  • 供应商设备封装:

    100-TQFP(14x14)

  • 包装:

    托盘

  • 其它名称:

    71V67703S75PFGI

供应商 型号 品牌 批号 封装 库存 备注 价格
IDT
23+
165-CABGA(13x15)
73390
专业分销产品!原装正品!价格优势!
询价
IDT
23+
NA
19960
只做进口原装,终端工厂免费送样
询价
IDT
23+
165-FBGA
4090
原装现货
询价
IDT
22+
165CABGA (13x15)
9000
原厂渠道,现货配单
询价
IDT
21+
165CABGA (13x15)
13880
公司只售原装,支持实单
询价
IDT
23+
165CABGA (13x15)
9000
原装正品,支持实单
询价
IDT
23+
100TQFP
9526
询价
IDT
23+
TQFP
1006
全新原装现货
询价
IDT
2021+
2079
只做原装假一罚十
询价
IDT
22+23+
QFP
41484
绝对原装正品现货,全新深圳原装进口现货
询价
更多IDT71V65603S100BQI供应商 更新时间2024-3-29 14:25:00