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71V65703S75BG

256Kx36,512Kx183.3VSynchronousZBT™SRAMs3.3VI/O,BurstCounterFlow-ThroughOutputs

Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-100MHz (7.5nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandread cycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

71V65703S75BGG

256Kx36,512Kx183.3VSynchronousZBT™SRAMs3.3VI/O,BurstCounterFlow-ThroughOutputs

Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-100MHz (7.5nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandread cycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

71V65703S75BQ

256Kx36,512Kx183.3VSynchronousZBT™SRAMs3.3VI/O,BurstCounterFlow-ThroughOutputs

Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-100MHz (7.5nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandread cycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

71V65703S75BQG

256Kx36,512Kx183.3VSynchronousZBT™SRAMs3.3VI/O,BurstCounterFlow-ThroughOutputs

Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-100MHz (7.5nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandread cycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

71V65703S75PFG

256Kx36,512Kx183.3VSynchronousZBT™SRAMs3.3VI/O,BurstCounterFlow-ThroughOutputs

Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-100MHz (7.5nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandread cycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

71V65703S75PFGI

256Kx36,512Kx183.3VSynchronousZBT™SRAMs3.3VI/O,BurstCounterFlow-ThroughOutputs

Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-100MHz (7.5nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandread cycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

IDT71V65703S75BG

256Kx36,512Kx183.3VSynchronousZBTSRAMs

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT

IDT71V65703S75BGI

256Kx36,512Kx183.3VSynchronousZBTSRAMs

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT

IDT71V65703S75BQ

256Kx36,512Kx183.3VSynchronousZBTSRAMs

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT

IDT71V65703S75BQI

256Kx36,512Kx183.3VSynchronousZBTSRAMs

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT

IDT71V65703S75PF

256Kx36,512Kx183.3VSynchronousZBTSRAMs

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT

IDT71V65703S75PFI

256Kx36,512Kx183.3VSynchronousZBTSRAMs

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT

详细参数

  • 型号:

    IDT71V65703S75BGG

  • 功能描述:

    IC SRAM 9MBIT 75NS 119BGA

  • RoHS:

  • 类别:

    集成电路(IC) >> 存储器

  • 系列:

    -

  • 标准包装:

    45

  • 系列:

    - 格式 -

  • 存储器:

    RAM

  • 存储器类型:

    SRAM - 双端口,异步

  • 存储容量:

    128K(8K x 16)

  • 速度:

    15ns

  • 接口:

    并联

  • 电源电压:

    3 V ~ 3.6 V

  • 工作温度:

    0°C ~ 70°C

  • 封装/外壳:

    100-LQFP

  • 供应商设备封装:

    100-TQFP(14x14)

  • 包装:

    托盘

  • 其它名称:

    70V25S15PF

供应商型号品牌批号封装库存备注价格
IDT
19+
BGA
12523
询价
IDT
23+
119-PBGA(14x22)
71890
专业分销产品!原装正品!价格优势!
询价
IDT
2016+
BGA
3526
假一罚十进口原装现货原盘原标!
询价
IDT
22+
BGA
5000
全新原装现货!自家库存!
询价
23+
N/A
59210
正品授权货源可靠
询价
N/A
2021+
SMD
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
询价
IDT
BGA
265209
假一罚十原包原标签常备现货!
询价
IDT
23+
BGA
50000
全新原装正品现货,支持订货
询价
IDT
21+
BGA119
50000
全新原装正品现货,支持订货
询价
IDT
21+
BGA
10000
原装现货假一罚十
询价
更多IDT71V65703S75BGG供应商 更新时间2024-4-27 16:04:00