首页 >IDT71V65703S85PF>规格书列表
| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
IDT71V65703S85PF | 256K x 36, 512K x 18 3.3V Synchronous ZBT SRAMs | IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司 | IDT | |
IDT71V65703S85PF | 包装：卷带（TR） 封装/外壳：100-LQFP 类别：集成电路（IC） 存储器 描述：IC SRAM 9MBIT PARALLEL 100TQFP | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | |
256K x 36, 512K x 18 3.3V Synchronous ZBT SRAMs | IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司 | IDT | ||
包装：卷带（TR） 封装/外壳：100-LQFP 类别：集成电路（IC） 存储器 描述：IC SRAM 9MBIT PARALLEL 100TQFP | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
包装：卷带（TR） 封装/外壳：100-LQFP 类别：集成电路（IC） 存储器 描述：IC SRAM 9MBIT PARALLEL 100TQFP | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
256Kx36,512Kx183.3VSynchronousZBT™SRAMs3.3VI/O,BurstCounterFlow-ThroughOutputs Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-100MHz (7.5nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandread cycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/ | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
256Kx36,512Kx183.3VSynchronousZBT™SRAMs3.3VI/O,BurstCounterFlow-ThroughOutputs Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-100MHz (7.5nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandread cycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/ | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
256Kx36,512Kx183.3VSynchronousZBT™SRAMs3.3VI/O,BurstCounterFlow-ThroughOutputs Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-100MHz (7.5nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandread cycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/ | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
256Kx36,512Kx183.3VSynchronousZBT™SRAMs3.3VI/O,BurstCounterFlow-ThroughOutputs Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-100MHz (7.5nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandread cycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/ | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
256Kx36,512Kx183.3VSynchronousZBT™SRAMs3.3VI/O,BurstCounterFlow-ThroughOutputs Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-100MHz (7.5nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandread cycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/ | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
256Kx36,512Kx183.3VSynchronousZBT™SRAMs3.3VI/O,BurstCounterFlow-ThroughOutputs Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-100MHz (7.5nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandread cycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/ | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
256Kx36,512Kx183.3VSynchronousZBT™SRAMs3.3VI/O,BurstCounterFlow-ThroughOutputs Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-100MHz (7.5nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandread cycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/ | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
256Kx36,512Kx183.3VSynchronousZBT™SRAMs3.3VI/O,BurstCounterFlow-ThroughOutputs Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-100MHz (7.5nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandread cycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/ | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
256Kx36,512Kx183.3VSynchronousZBT™SRAMs3.3VI/O,BurstCounterFlow-ThroughOutputs Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-100MHz (7.5nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandread cycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/ | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
256Kx36,512Kx183.3VSynchronousZBT™SRAMs3.3VI/O,BurstCounterFlow-ThroughOutputs Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-100MHz (7.5nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandread cycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/ | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
256Kx36,512Kx183.3VSynchronousZBTSRAMs | IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司 | IDT | ||
256Kx36,512Kx183.3VSynchronousZBTSRAMs | IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司 | IDT | ||
256Kx36,512Kx183.3VSynchronousZBTSRAMs | IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司 | IDT | ||
256Kx36,512Kx183.3VSynchronousZBTSRAMs | IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司 | IDT |
产品属性
- 产品编号：
IDT71V65703S85PF
- 制造商：
Renesas Electronics America Inc
- 类别：
集成电路（IC） > 存储器
- 包装：
卷带（TR）
- 存储器类型：
易失
- 存储器格式：
SRAM
- 技术：
SRAM - 同步，SDR（ZBT）
- 存储容量：
9Mb（256K x 36）
- 存储器接口：
并联
- 电压 - 供电：
3.135V ~ 3.465V
- 工作温度：
0°C ~ 70°C（TA）
- 安装类型：
表面贴装型
- 封装/外壳：
100-LQFP
- 供应商器件封装：
100-TQFP（14x14）
- 描述：
IC SRAM 9MBIT PARALLEL 100TQFP
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IDT |
23+ |
QFP |
8000 |
全新原装现货,欢迎来电咨询 |
询价 | ||
IDT |
23+ |
100TQFP |
9526 |
询价 | |||
IDT |
2016+ |
QFP |
6528 |
只做进口原装现货!或者订货,假一赔十! |
询价 | ||
IDT |
23+ |
100-TQFP(14x14) |
36430 |
专业分销产品!原装正品!价格优势! |
询价 | ||
IDT |
23+ |
TQFP |
1008 |
全新原装现货 |
询价 | ||
IDT |
24+ |
QFP |
5000 |
只做原装公司现货 |
询价 | ||
IDT |
2021+ |
1931 |
只做原装假一罚十 |
询价 | |||
IDT |
23+ |
NA |
19960 |
只做进口原装,终端工厂免费送样 |
询价 | ||
IDT |
18+ |
QFP |
5680 |
XILINX |
询价 | ||
23+ |
N/A |
85500 |
正品授权货源可靠 |
询价 |
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