首页 >IDT71V65703S85BGI>规格书列表
零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
---|---|---|---|---|
IDT71V65703S85BGI | 256K x 36, 512K x 18 3.3V Synchronous ZBT SRAMs | IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司 | IDT | |
256Kx36,512Kx183.3VSynchronousZBT™SRAMs3.3VI/O,BurstCounterFlow-ThroughOutputs Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-100MHz (7.5nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandread cycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/ | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
256Kx36,512Kx183.3VSynchronousZBT™SRAMs3.3VI/O,BurstCounterFlow-ThroughOutputs Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-100MHz (7.5nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandread cycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/ | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
256Kx36,512Kx183.3VSynchronousZBT™SRAMs3.3VI/O,BurstCounterFlow-ThroughOutputs Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-100MHz (7.5nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandread cycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/ | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
256Kx36,512Kx183.3VSynchronousZBT™SRAMs3.3VI/O,BurstCounterFlow-ThroughOutputs Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-100MHz (7.5nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandread cycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/ | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
256Kx36,512Kx183.3VSynchronousZBT™SRAMs3.3VI/O,BurstCounterFlow-ThroughOutputs Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-100MHz (7.5nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandread cycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/ | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
256Kx36,512Kx183.3VSynchronousZBT™SRAMs3.3VI/O,BurstCounterFlow-ThroughOutputs Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-100MHz (7.5nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandread cycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/ | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
256Kx36,512Kx183.3VSynchronousZBT™SRAMs3.3VI/O,BurstCounterFlow-ThroughOutputs Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-100MHz (7.5nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandread cycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/ | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
256Kx36,512Kx183.3VSynchronousZBT™SRAMs3.3VI/O,BurstCounterFlow-ThroughOutputs Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-100MHz (7.5nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandread cycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/ | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
256Kx36,512Kx183.3VSynchronousZBT™SRAMs3.3VI/O,BurstCounterFlow-ThroughOutputs Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-100MHz (7.5nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandread cycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/ | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
256Kx36,512Kx183.3VSynchronousZBT™SRAMs3.3VI/O,BurstCounterFlow-ThroughOutputs Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-100MHz (7.5nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandread cycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/ | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
256Kx36,512Kx183.3VSynchronousZBTSRAMs | IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司 | IDT | ||
256Kx36,512Kx183.3VSynchronousZBTSRAMs | IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司 | IDT | ||
256Kx36,512Kx183.3VSynchronousZBTSRAMs | IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司 | IDT | ||
256Kx36,512Kx183.3VSynchronousZBTSRAMs | IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司 | IDT | ||
256Kx36,512Kx183.3VSynchronousZBTSRAMs | IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司 | IDT |
详细参数
- 型号:
IDT71V65703S85BGI
- 功能描述:
IC SRAM 9MBIT 85NS 119BGA
- RoHS:
否
- 类别:
集成电路(IC) >> 存储器
- 系列:
-
- 标准包装:
45
- 系列:
- 格式 -
- 存储器:
RAM
- 存储器类型:
SRAM - 双端口,异步
- 存储容量:
128K(8K x 16)
- 速度:
15ns
- 接口:
并联
- 电源电压:
3 V ~ 3.6 V
- 工作温度:
0°C ~ 70°C
- 封装/外壳:
100-LQFP
- 供应商设备封装:
100-TQFP(14x14)
- 包装:
托盘
- 其它名称:
70V25S15PF
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
IDT |
23+ |
119-PBGA(14x22) |
73390 |
专业分销产品!原装正品!价格优势! |
询价 | ||
IDT |
23+ |
NA |
19960 |
只做进口原装,终端工厂免费送样 |
询价 | ||
IDT |
22+ |
BGA |
5000 |
全新原装现货!自家库存! |
询价 | ||
IDT |
23+ |
119-BGA |
5860 |
原装现货 |
询价 | ||
IDT |
22+ |
119PBGA (14x22) |
9000 |
原厂渠道,现货配单 |
询价 | ||
IDT |
21+ |
119PBGA (14x22) |
13880 |
公司只售原装,支持实单 |
询价 | ||
IDT |
23+ |
119PBGA (14x22) |
9000 |
原装正品,支持实单 |
询价 | ||
IDT |
23+ |
165BGA |
9526 |
询价 | |||
IDT |
23+ |
TQFP |
8659 |
原装公司现货!原装正品价格优势. |
询价 | ||
IDT |
BGAQFP |
6688 |
15 |
现货库存 |
询价 |
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