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71V65703S80BG

256Kx36,512Kx183.3VSynchronousZBT™SRAMs3.3VI/O,BurstCounterFlow-ThroughOutputs

Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-100MHz (7.5nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandread cycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

71V65703S80BGG

256Kx36,512Kx183.3VSynchronousZBT™SRAMs3.3VI/O,BurstCounterFlow-ThroughOutputs

Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-100MHz (7.5nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandread cycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

71V65703S80BQ

256Kx36,512Kx183.3VSynchronousZBT™SRAMs3.3VI/O,BurstCounterFlow-ThroughOutputs

Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-100MHz (7.5nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandread cycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

71V65703S80BQG

256Kx36,512Kx183.3VSynchronousZBT™SRAMs3.3VI/O,BurstCounterFlow-ThroughOutputs

Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-100MHz (7.5nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandread cycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

71V65703S80BQGI

256Kx36,512Kx183.3VSynchronousZBT™SRAMs3.3VI/O,BurstCounterFlow-ThroughOutputs

Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-100MHz (7.5nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandread cycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

71V65703S80BQI

256Kx36,512Kx183.3VSynchronousZBT™SRAMs3.3VI/O,BurstCounterFlow-ThroughOutputs

Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-100MHz (7.5nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandread cycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

71V65703S80PFG

256Kx36,512Kx183.3VSynchronousZBT™SRAMs3.3VI/O,BurstCounterFlow-ThroughOutputs

Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-100MHz (7.5nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandread cycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

71V65703S80PFGI

256Kx36,512Kx183.3VSynchronousZBT™SRAMs3.3VI/O,BurstCounterFlow-ThroughOutputs

Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-100MHz (7.5nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandread cycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

IDT71V65703S80BG

256Kx36,512Kx183.3VSynchronousZBTSRAMs

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT71V65703S80BGI

256Kx36,512Kx183.3VSynchronousZBTSRAMs

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT71V65703S80BQ

256Kx36,512Kx183.3VSynchronousZBTSRAMs

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT71V65703S80BQI

256Kx36,512Kx183.3VSynchronousZBTSRAMs

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT71V65703S80PF

256Kx36,512Kx183.3VSynchronousZBTSRAMs

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT71V65703S80PFI

256Kx36,512Kx183.3VSynchronousZBTSRAMs

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

详细参数

  • 型号:

    IDT71V65703S80PFG

  • 功能描述:

    IC SRAM 9MBIT 80NS 100TQFP

  • RoHS:

  • 类别:

    集成电路(IC) >> 存储器

  • 系列:

    -

  • 标准包装:

    72

  • 系列:

    - 格式 -

  • 存储器:

    RAM

  • 存储器类型:

    SRAM - 同步

  • 存储容量:

    9M(256K x 36)

  • 速度:

    75ns

  • 接口:

    并联

  • 电源电压:

    3.135 V ~ 3.465 V

  • 工作温度:

    -40°C ~ 85°C

  • 封装/外壳:

    100-LQFP

  • 供应商设备封装:

    100-TQFP(14x14)

  • 包装:

    托盘

  • 其它名称:

    71V67703S75PFGI

供应商型号品牌批号封装库存备注价格
IDT
23+
100-TQFP(14x14)
1389
专业分销产品!原装正品!价格优势!
询价
IDT
22+
100TQFP
9000
原厂渠道,现货配单
询价
IDT
21+
100TQFP
13880
公司只售原装,支持实单
询价
IDT
23+
100TQFP
9000
原装正品,支持实单
询价
IDT
1525+
QFP100
30000
绝对原装进口环保现货可开17%增值税发票
询价
IDT
23+
100-TQFP
7642
原装现货
询价
IDT
2023+
SMD
12622
安罗世纪电子只做原装正品货
询价
IDT
23+
100TQFP
9526
询价
IDT
23+
NA
19960
只做进口原装,终端工厂免费送样
询价
IDT, Integrated Device Technol
21+
100-TQFP(14x14)
56200
一级代理/放心采购
询价
更多IDT71V65703S80PFG供应商 更新时间2024-5-2 10:50:00