首页 >IDT71V65703S75PFG>规格书列表
| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
256Kx36,512Kx183.3VSynchronousZBT™SRAMs3.3VI/O,BurstCounterFlow-ThroughOutputs Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-100MHz (7.5nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandread cycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/ | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
256Kx36,512Kx183.3VSynchronousZBT™SRAMs3.3VI/O,BurstCounterFlow-ThroughOutputs Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-100MHz (7.5nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandread cycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/ | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
256Kx36,512Kx183.3VSynchronousZBT™SRAMs3.3VI/O,BurstCounterFlow-ThroughOutputs Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-100MHz (7.5nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandread cycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/ | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
256Kx36,512Kx183.3VSynchronousZBT™SRAMs3.3VI/O,BurstCounterFlow-ThroughOutputs Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-100MHz (7.5nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandread cycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/ | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
256Kx36,512Kx183.3VSynchronousZBT™SRAMs3.3VI/O,BurstCounterFlow-ThroughOutputs Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-100MHz (7.5nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandread cycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/ | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
256Kx36,512Kx183.3VSynchronousZBT™SRAMs3.3VI/O,BurstCounterFlow-ThroughOutputs Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-100MHz (7.5nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandread cycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/ | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
256Kx36,512Kx183.3VSynchronousZBTSRAMs | IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司 | IDT | ||
256Kx36,512Kx183.3VSynchronousZBTSRAMs | IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司 | IDT | ||
256Kx36,512Kx183.3VSynchronousZBTSRAMs | IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司 | IDT | ||
256Kx36,512Kx183.3VSynchronousZBTSRAMs | IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司 | IDT | ||
256Kx36,512Kx183.3VSynchronousZBTSRAMs | IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司 | IDT | ||
256Kx36,512Kx183.3VSynchronousZBTSRAMs | IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司 | IDT |
详细参数
- 型号：
IDT71V65703S75PFG
- 功能描述：
IC SRAM 9MBIT 7.5NS 100TQFP
- RoHS：
是
- 类别：
集成电路(IC) >> 存储器
- 系列：
-
- 标准包装：
2,500
- 系列：
- 格式 -
- 存储器：
EEPROMs - 串行
- 存储器类型：
EEPROM
- 存储容量：
1K(128 x 8)
- 速度：
100kHz
- 接口：
UNI/O?（单线）
- 电源电压：
1.8 V ~ 5.5 V
- 工作温度：
-40°C ~ 85°C
- 封装/外壳：
8-TSSOP，8-MSOP（0.118，3.00mm 宽）
- 供应商设备封装：
8-MSOP
- 包装：
带卷(TR)
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IDT |
23+ |
100-TQFP(14x14) |
39257 |
专业分销产品!原装正品!价格优势! |
询价 | ||
IDT |
23+ |
100-TQFP |
9526 |
询价 | |||
IDT |
23+ |
100-TQFP |
7750 |
全新原装优势 |
询价 | ||
IDT |
22+23+ |
QFP |
26715 |
绝对原装正品全新进口深圳现货 |
询价 | ||
IDT |
1801+ |
QFP |
5960 |
原装正品-现货-绝对有货-实单价可谈 |
询价 | ||
IDT |
22+ |
100-TQFP |
10000 |
原装正品优势现货供应 |
询价 | ||
IDT |
2048+ |
QFP |
9851 |
只做原装正品现货!或订货假一赔十! |
询价 | ||
IDT |
23+ |
100-TQFP |
7642 |
原装现货 |
询价 | ||
IDT |
2021+ |
QFP |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
询价 | ||
IDT |
22+ |
100TQFP |
9000 |
原厂渠道,现货配单 |
询价 |
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