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IDT71V65603S100PFI

256K x 36, 512K x 18 3.3V Synchronous ZBT SRAMs

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT

IDT71V65603S100PFI

包装:卷带(TR) 封装/外壳:100-LQFP 类别:集成电路(IC) 存储器 描述:IC SRAM 9MBIT PARALLEL 100TQFP

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

IDT71V65603S100PFI8

包装:卷带(TR) 封装/外壳:100-LQFP 类别:集成电路(IC) 存储器 描述:IC SRAM 9MBIT PARALLEL 100TQFP

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

71V65603S100BG

256Kx36,512Kx183.3VSynchronousZBT™SRAMsZBT™Feature3.3VI/O,BurstCounterPipelinedOutputs

Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-150MHz (3.8nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandreadcycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/W(

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

71V65603S100BGI

256Kx36,512Kx183.3VSynchronousZBT™SRAMsZBT™Feature3.3VI/O,BurstCounterPipelinedOutputs

Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-150MHz (3.8nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandreadcycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/W(

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

71V65603S100BQ

256Kx36,512Kx183.3VSynchronousZBT™SRAMsZBT™Feature3.3VI/O,BurstCounterPipelinedOutputs

Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-150MHz (3.8nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandreadcycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/W(

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

71V65603S100BQG

256Kx36,512Kx183.3VSynchronousZBT™SRAMsZBT™Feature3.3VI/O,BurstCounterPipelinedOutputs

Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-150MHz (3.8nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandreadcycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/W(

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

71V65603S100BQGI

256Kx36,512Kx183.3VSynchronousZBT™SRAMsZBT™Feature3.3VI/O,BurstCounterPipelinedOutputs

Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-150MHz (3.8nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandreadcycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/W(

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

71V65603S100BQI

256Kx36,512Kx183.3VSynchronousZBT™SRAMsZBT™Feature3.3VI/O,BurstCounterPipelinedOutputs

Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-150MHz (3.8nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandreadcycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/W(

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

71V65603S100PFG

256Kx36,512Kx183.3VSynchronousZBT™SRAMsZBT™Feature3.3VI/O,BurstCounterPipelinedOutputs

Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-150MHz (3.8nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandreadcycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/W(

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

71V65603S100PFGI

256Kx36,512Kx183.3VSynchronousZBT™SRAMsZBT™Feature3.3VI/O,BurstCounterPipelinedOutputs

Features ◆256Kx36,512Kx18memoryconfigurations ◆Supportshighperformancesystemspeed-150MHz (3.8nsClock-to-DataAccess) ◆ZBTTMFeature-Nodeadcyclesbetweenwriteandreadcycles ◆Internallysynchronizedoutputbufferenableeliminatesthe needtocontrolOE ◆SingleR/W(

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

IDT71V65603S100BG

256Kx36,512Kx183.3VSynchronousZBTSRAMs

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT

IDT71V65603S100BGI

256Kx36,512Kx183.3VSynchronousZBTSRAMs

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT

IDT71V65603S100BQ

256Kx36,512Kx183.3VSynchronousZBTSRAMs

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT

IDT71V65603S100BQI

256Kx36,512Kx183.3VSynchronousZBTSRAMs

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT

IDT71V65603S100PF

256Kx36,512Kx183.3VSynchronousZBTSRAMs

IDTIntegrated Device Technology, Inc.

集成器深圳市集成器件技术有限公司

IDT

产品属性

  • 产品编号:

    IDT71V65603S100PFI

  • 制造商:

    Renesas Electronics America Inc

  • 类别:

    集成电路(IC) > 存储器

  • 包装:

    卷带(TR)

  • 存储器类型:

    易失

  • 存储器格式:

    SRAM

  • 技术:

    SRAM - 同步,SDR(ZBT)

  • 存储容量:

    9Mb(256K x 36)

  • 存储器接口:

    并联

  • 电压 - 供电:

    3.135V ~ 3.465V

  • 工作温度:

    -40°C ~ 85°C(TA)

  • 安装类型:

    表面贴装型

  • 封装/外壳:

    100-LQFP

  • 供应商器件封装:

    100-TQFP(14x14)

  • 描述:

    IC SRAM 9MBIT PARALLEL 100TQFP

供应商型号品牌批号封装库存备注价格
IDT
8
全新原装!优势库存热卖中!
询价
IDT
23+
100TQFP
9526
询价
IDT
QFP100
3162
正品原装--自家现货-实单可谈
询价
IDT
23+
NA
19960
只做进口原装,终端工厂免费送样
询价
IDT, Integrated Device Technol
21+
100-TQFP(14x14)
56200
一级代理/放心采购
询价
IDT
23+
100-TQFP
4355
原装现货
询价
IDT
20+
QFP-100
1001
就找我吧!--邀您体验愉快问购元件!
询价
IDT
22+
100TQFP
9000
原厂渠道,现货配单
询价
IDT
21+
100TQFP
13880
公司只售原装,支持实单
询价
IDT
23+
100TQFP
9000
原装正品,支持实单
询价
更多IDT71V65603S100PFI供应商 更新时间2024-4-25 16:20:00