3.5A, 60V, 0.105 Ohm, Dual N-Channel, Logic Level UltraFET Power MOSFET

Features • Ultra Low On-Resistance - rDS(ON) = 0.090Ω, VGS = 10V - rDS(ON) = 0.105Ω, VGS = 5V • Simulation Models - Temperature Compensated PSPICE® and SABER™ Electrical Models - SPICE and SABER Thermal Impedance Models - www.fairchildsemi.com • Peak Current vs Pulse Wi

文件：262.44 Kbytes 页数：12 Pages

FAIRCHILD

仙童半导体

3.5A, 60V, 0.105 Ohm, Dual N-Channel, Logic Level UltraFET Power MOSFET

ONSEMI

安森美半导体

3.5A, 60V, 0.105 Ohm, Dual N-Channel, Logic Level UltraFET Power MOSFET

Features • Ultra Low On-Resistance - rDS(ON) = 0.090Ω, VGS = 10V - rDS(ON) = 0.105Ω, VGS = 5V • Simulation Models - Temperature Compensated PSPICE® and SABER™ Electrical Models - SPICE and SABER Thermal Impedance Models - www.fairchildsemi.com • Peak Current vs Pulse Wi

文件：263.15 Kbytes 页数：12 Pages

FAIRCHILD

仙童半导体

3.5A, 60V, 0.105 Ohm, Dual N-Channel, Logic Level UltraFET Power MOSFET

Features • Ultra Low On-Resistance - rDS(ON) = 0.090Ω, VGS = 10V - rDS(ON) = 0.105Ω, VGS = 5V • Simulation Models - Temperature Compensated PSPICE® and SABER™ Electrical Models - SPICE and SABER Thermal Impedance Models - www.fairchildsemi.com • Peak Current vs Pulse Wi

文件：263.15 Kbytes 页数：12 Pages

FAIRCHILD

仙童半导体