3.5A, 60V, 0.105 Ohm, Dual N-Channel, Logic Level UltraFET Power MOSFET

Features • Ultra Low On-Resistance - rDS(ON) = 0.090Ω, VGS = 10V - rDS(ON) = 0.105Ω, VGS = 5V • Simulation Models - Temperature Compensated PSPICE® and SABER™ Electrical Models - SPICE and SABER Thermal Impedance Models - www.fairchildsemi.com • Peak Current vs Pulse Wi

文件：263.15 Kbytes 页数：12 Pages

FAIRCHILD

仙童半导体

3.5A, 60V, 0.105 Ohm, Dual N-Channel, Logic Level UltraFET짰 Power MOSFET

文件：548.58 Kbytes 页数：12 Pages

FAIRCHILD

仙童半导体

丝印：76407DK8；Package：SO-8；Dual N-Channel Logic Level UltraFET짰 Power MOSFET 60 V, 3.5 A, 105 m廓

文件：976.58 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

3.5A, 60V, 0.105 Ohm, Dual N-Channel, Logic Level UltraFET Power MOSFET

Features • Ultra Low On-Resistance - rDS(ON) = 0.090Ω, VGS = 10V - rDS(ON) = 0.105Ω, VGS = 5V • Simulation Models - Temperature Compensated PSPICE® and SABER© Electrical Models - Spice and SABER Thermal Impedance Models - www.semi.Intersil.com • Peak Current vs Pulse Wi

文件：375.48 Kbytes 页数：12 Pages

INTERSIL

3.5A, 60V, 0.105 Ohm, Dual N-Channel, Logic Level UltraFET Power MOSFET

Features • Ultra Low On-Resistance - rDS(ON) = 0.090Ω, VGS = 10V - rDS(ON) = 0.105Ω, VGS = 5V • Simulation Models - Temperature Compensated PSPICE® and SABER™ Electrical Models - SPICE and SABER Thermal Impedance Models - www.fairchildsemi.com • Peak Current vs Pulse Wi

文件：262.44 Kbytes 页数：12 Pages

FAIRCHILD

仙童半导体

3.5A, 60V, 0.105 Ohm, Dual N-Channel, Logic Level UltraFET Power MOSFET

Features • Ultra Low On-Resistance - rDS(ON) = 0.090Ω, VGS = 10V - rDS(ON) = 0.105Ω, VGS = 5V • Simulation Models - Temperature Compensated PSPICE® and SABER™ Electrical Models - SPICE and SABER Thermal Impedance Models - www.fairchildsemi.com • Peak Current vs Pulse Wi

文件：262.44 Kbytes 页数：12 Pages

FAIRCHILD

仙童半导体