12A, 60V, 0.107 Ohm, N-Channel, Logic Level UltraFET Power MOSFET

Features • Ultra Low On-Resistance - rDS(ON) = 0.092Ω, VGS = 10V - rDS(ON) = 0.107Ω, VGS = 5V • Simulation Models - Temperature Compensated PSPICE® and SABER™ Electrical Models - Spice and SABER Thermal Impedance Models - www.fairchildsemi.com • Peak Current vs Pulse Wi

文件：209.77 Kbytes 页数：10 Pages

FAIRCHILD

仙童半导体

12A, 60V, 0.107 Ohm, N-Channel, Logic Level UltraFET Power MOSFET

ONSEMI

安森美半导体

12A, 60V, 0.107 Ohm, N-Channel, Logic Level UltraFET Power MOSFET

Features • Ultra Low On-Resistance - rDS(ON) = 0.092Ω, VGS = 10V - rDS(ON) = 0.107Ω, VGS = 5V • Simulation Models - Temperature Compensated PSPICE® and SABER© Electrical Models - Spice and SABER© Thermal Impedance Models - www.Intersil.com • Peak Current vs Pulse Width

文件：340.17 Kbytes 页数：9 Pages

INTERSIL

12A, 60V, 0.107 Ohm, N-Channel, Logic Level UltraFET Power MOSFET

Features • Ultra Low On-Resistance - rDS(ON) = 0.092Ω, VGS = 10V - rDS(ON) = 0.107Ω, VGS = 5V • Simulation Models - Temperature Compensated PSPICE® and SABER™ Electrical Models - Spice and SABER Thermal Impedance Models - www.fairchildsemi.com • Peak Current vs Pulse Wi

文件：209.59 Kbytes 页数：10 Pages

FAIRCHILD

仙童半导体