20A, 60V, 0.056 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs

Features • Ultra Low On-Resistance - rDS(ON) = 0.049Ω, VGS = 10V - rDS(ON) = 0.056Ω, VGS = 5V • Simulation Models - Temperature Compensated PSPICE® and SABER™ Electrical Models - Spice and SABER Thermal Impedance Models - www.fairchildsemi.com • Peak Current vs Pulse Width C

文件：205.59 Kbytes 页数：10 Pages

FAIRCHILD

仙童半导体

20A, 60V, 0.056 Ohm, N-Channel, Logic Level UltraFET® Power MOSFETs

• Ultra Low On-Resistance\n   - rDS(ON) = 0.049Ω, VGS = 10V\n   - rDS(ON) = 0.056Ω, VGS = 5V\n• Simulation Models\n   - Temperature Compensated PSPICE® and SABER™ Electrical Models\n   - Spice and SABER Thermal Impedance Models\n   - www.fairchildsemi.com\n• Peak Current vs Pulse Width Curve\n• UIS ;

ONSEMI

安森美半导体

20A, 60V, 0.056 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs

Features • Ultra Low On-Resistance - rDS(ON) = 0.049Ω, VGS = 10V - rDS(ON) = 0.056Ω, VGS = 5V • Simulation Models - Temperature Compensated PSPICE® and SABER™ Electrical Models - Spice and SABER Thermal Impedance Models - www.fairchildsemi.com • Peak Current vs Pulse Width C

文件：205.59 Kbytes 页数：10 Pages

FAIRCHILD

仙童半导体

N-channel Enhancement Mode Power MOSFET

Features  VDS= 60V, ID= 30A RDS(ON)

文件：912.96 Kbytes 页数：4 Pages

BYCHIP

百域芯